Philips bsv64 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D110
BSV64
NPN medium power transistor
Product specification
Supersedes data of 1997 Apr 21
File under Discrete Semiconductors, SC04
1997 Sep 04
Philips Semiconductors Product specification
NPN medium power transistor BSV64
FEATURES
• High current (max. 2 A)
• Low voltage (max. 60 V)
• Good high current saturation characteristics.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
APPLICATIONS
• General purpose switching and amplification
• Print hammer driver.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpage
1
2
2
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage open emitter −−100 V
collector-emitter voltage open base −−60 V
peak collector current −−5A
total power dissipation T
≤ 50 °C −−5W
case
DC current gain IC= 2 A; VCE=2V 40 −−
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz − 100 − MHz
3
1
1997 Sep 04 2
Philips Semiconductors Product specification
NPN medium power transistor BSV64
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 100 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 5V
collector current (DC) − 2A
peak collector current − 5A
peak base current − 500 mA
total power dissipation T
≤ 50 °C − 5W
case
storage temperature −65 +150 °C
junction temperature − 175 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-c
thermal resistance from junction to case 25 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
collector cut-off current IE= 0; VCB=60V −−10 µA
emitter cut-off current IC= 0; VEB=4V −−10 µA
DC current gain IC= 2 A; VCE=2V 40 −−
collector-emitter saturation
IC= 5 A; IB= 0.5 A −−1V
voltage
V
BEsat
C
c
f
T
base-emitter saturation voltage IC= 5 A; IB= 0.5 A −−1.8 V
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−80 pF
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz − 100 − MHz
Switching times (between 10% and 90% levels)
t
on
t
off
turn on time I
turn-off time −−1.2 µs
= 5 A; I
Con
I
= −500 mA
Boff
= 500 mA;
Bon
−−0.6 µs
1997 Sep 04 3
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