Philips BSV52 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BSV52
NPN switching transistor
Product specification
Supersedes data of 1997 May 07
1999 Apr 15
Philips Semiconductors Product specification
NPN switching transistor BSV52
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 12 V).
APPLICATIONS
• High speed saturated switching applications, especially
in portable equipment.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
BSV52 B2∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
Top view
3
1
21
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
NPN switching transistor BSV52
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=20V −−400 nA
I
= 0; VCB=20V; Tj= 125 °C −−30 µA
E
emitter cut-off current IC= 0; VEB=4V −−100 nA
DC current gain VCE=1V
I
= 1 mA 25 −−
C
=10mA 40 − 120
I
C
I
=50mA 25 −−
C
collector-emitter saturation
voltage
IC= 10 mA; IB= 300 µA −−300 mV
I
= 10 mA; IB=1mA −−250 mV
C
I
= 50 mA; IB=5mA −−400 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 700 − 850 mV
I
= 50 mA; IB=5mA −−1.2 V
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz −−4pF
emitter capacitance IC=ic= 0; VEB= 1 V; f = 1 MHz −−4.5 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 400 500 − MHz
turn-on time I
delay time −−4ns
I
Con
Boff
= 10 mA; I
= −1.5 mA
Bon
= 3 mA;
−−10 ns
rise time −−6ns
turn-off time −−20 ns
storage time −−10 ns
fall time −−10 ns
1999 Apr 15 3
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