Philips bsv15, bsv 16, bsv17 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BSV15; BSV16; BSV17
PNP medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors Product specification
PNP medium power transistors BSV15; BSV16; BSV17
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• General industrial applications.
DESCRIPTION
PNP medium power transistor in a TO-39 metal package.
handbook, halfpage
1
2
2
3
MAM334
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSV15 −−40 V
BSV16 −−60 V
BSV17 −−90 V
V
CEO
collector-emitter voltage open base
BSV15 −−40 V
BSV16 −−60 V
BSV17 −−80 V
I
CM
P
tot
h
FE
peak collector current −−2A
total power dissipation T
≤ 25 °C − 0.8 W
amb
T
≤ 25 °C − 5W
case
DC current gain IC= −100 mA; VCE= −1V
BSV15-10; BSV16-10; BSV17-10 63 160
BSV15-16; BSV16-16 100 250
f
T
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz 50 − MHz
3
1
1997 Apr 22 2
Philips Semiconductors Product specification
PNP medium power transistors BSV15; BSV16; BSV17
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BSV15 −−40 V
BSV16 −−60 V
BSV17 −−90 V
collector-emitter voltage open base
BSV15 −−40 V
BSV16 −−60 V
BSV17 −−80 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
≤ 25 °C − 5W
T
case
≤ 50 °C − 5W
T
mb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
R
th j-c
thermal resistance from junction to ambient in free air 220 K/W
thermal resistance from junction to mounting base 30 K/W
thermal resistance from junction to case 35 K/W
1997 Apr 22 3
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