Philips bst72a DATASHEETS
1. Description
2. Features
BST72A
N-channel enhancement mode field-effect transistor
Rev. 03 — 25 July 2000 Product specification
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BST72A in SOT54 (TO-92 variant).
■ TrenchMOS™ technology
■ Very fast switching
■ Logic level compatible.
3. Applications
■ Relay driver
■ High speed line driver
c
c
■ Logic level translator.
4. Pinning information
Table 1: Pinning - SOT54, simplified outline and symbol
Pin Description Simplified outline Symbol
1 source (s)
2 gate (g)
3 drain (d)
03ab40
321
SOT54 (TO-92 variant) N-channel MOSFET
d
g
03ab30
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 100 V
drain current (DC) T
total power dissipation T
=25°C; VGS=5V − 190 mA
amb
=25°C − 0.83 W
amb
junction temperature − 150 °C
drain-source on-state resistance VGS=5V; ID= 150 mA 5 10 Ω
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
drain-source voltage (DC) Tj=25to150°C − 100 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−100 V
gate-source voltage (DC) −±20 V
drain current (DC) T
=25°C; VGS=5V;
amb
− 190 mA
Figure 2 and 3
T
= 100 °C; VGS=5V;Figure 2 − 120 mA
amb
peak drain current T
=25°C; pulsed; tp≤ 10 µs;
amb
− 0.8 A
Figure 3
total power dissipation T
=25°C; Figure 1 − 0.83 W
amb
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C
source (diode forward) current (DC) T
peak source (diode forward) current T
=25°C − 190 mA
amb
=25°C; pulsed; tp≤ 10 µs − 0.8 A
amb
9397 750 07296
Product specification Rev. 03 — 25 July 2000 2 of 13
© Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
T
amb
03aa11
(oC)
120
100
P
der
(%)
80
60
40
20
0
0 25 50 75 100 125 150 175
P
P
der
tot
----------------------
P
tot 25 C°()
100%×=
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
1
I
D
(A)
-1
10
-2
10
R
= VDS/ I
DSon
P
δ =
D
t
p
T
D.C.
120
I
der
100
(%)
80
60
40
20
0
0 25 50 75 100 125 150 175
03aa19
T
(oC)
amb
VGS≥ 5V
I
D
I
------------------ -
der
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03aa62
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
t
T
Ta = 25oC
VDS (V)
3
T
=25°C; IDM is single pulse.
amb
t
p
-3
10
11010210
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07296
Product specification Rev. 03 — 25 July 2000 3 of 13
© Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
thermal resistance from junction to ambient vertical in still air; lead
length ≤ 5 mm; Figure 4
7.1 Transient thermal impedance
150 K/W
03aa59
t
p
δ =
T
t
p
t
T
2
tp (s)
Z
th(j-a)
(K/W)
3
10
δ = 0.5
2
10
0.2
0.1
10
0.05
0.02
1
-1
10
10
single pulse
-5
-4
10
-3
10
-2
10
-1
10
P
11010
Vertical in still air.
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
duration.
9397 750 07296
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 03 — 25 July 2000 4 of 13
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