Philips BST52, BST51, BST50 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BST50; BST51; BST52
NPN Darlington transistors
Product specification
Supersedes data of 1997 Apr 16
1999 Apr 26
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
FEATURES
• High current (max. 0.5 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp driving.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.
MARKING
TYPE NUMBER MARKING CODE
BST50 AS1
BST51 AS2
BST52 AS3
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
handbook, halfpage
3
123
Bottom view
MAM327
Fig.1 Simplified outline (SOT89) and symbol.
2
1
1999 Apr 26 2
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BST50 − 60 V
BST51 − 80 V
BST52 − 90 V
collector-emitter voltage VBE=0
BST50 − 45 V
BST51 − 60 V
BST52 − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 0.5 A
peak collector current − 1.5 A
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
2
.
1999 Apr 26 3
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