Philips BST40, BST39 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BST39; BST40
NPN high-voltage transistors
Product specification
Supersedes data of 1997 May 22
1999 Apr 26
Philips Semiconductors Product specification
NPN high-voltage transistors BST39; BST40
FEATURES
PINNING
• Low current (max. 100 mA)
• High voltage (max. 350 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
MARKING
TYPE NUMBER MARKING CODE
BST39 AT1
BST40 AT2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BST39 − 400 V
BST40 − 300 V
V
CEO
collector-emitter voltage open base
BST39 − 350 V
BST40 − 250 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
2
.
1999 Apr 26 2
Philips Semiconductors Product specification
NPN high-voltage transistors BST39; BST40
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note1 96 K/W
thermal resistance from junction to soldering point 16 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= 300 V − 20 nA
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 20 mA; VCE=10V − 40
collector-emitter saturation voltage IC= 50 mA; IB=4mA − 500 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 70 − MHz
1999 Apr 26 3
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