Philips BST16, BST15 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BST15; BST16
PNP high-voltage transistors
Product specification
Supersedes data of 1998 Aug 03
1999 Apr 26
Philips Semiconductors Product specification
PNP high-voltage transistors BST15; BST16
FEATURES
• Low current (max. 200 mA)
PINNING
PIN DESCRIPTION
• High voltage (max. 300 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
PNP high-voltage transistor in a SOT89 plastic package.
NPN complements: BST39 and BST40.
MARKING
TYPE NUMBER MARKING CODE
BST15 BT1
BST16 BT2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BST15 −−200 V
BST16 −−350 V
V
CEO
collector-emitter voltage open base
BST15 −−200 V
BST16 −−300 V
V
EBO
emitter-base voltage open collector
BST15 −−4V
BST16 −−6V
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector current (DC) −−200 mA
peak collector current −−400 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
2
.
1999 Apr 26 2
Philips Semiconductors Product specification
PNP high-voltage transistors BST15; BST16
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 95 K/W
thermal resistance from junction to soldering point 15 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current
BST15 I
BST16 I
= 0; VCB= −175 V −−100 nA
E
= 0; VCB= −280 V −−100 nA
E
emitter cut-off current
BST15 I
BST16 I
= 0; VEB= −4V −−100 nA
C
= 0; VEB= −6V −−100 nA
C
DC current gain IC= −50 mA; VCE= −10 V
BST15 30 150
BST16 30 120
collector-emitter saturation voltage IC= −50 mA; IB= −5mA − 750 mV
collector capacitance IE=ie= 0; VCB= −10 V;
− 15 pF
f = 1 MHz
transition frequency IC= −10 mA; VCE= −10 V;
15 − MHz
f = 100 MHz
1999 Apr 26 3
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