Philips BSS92 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BSS92
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b
1997 Jun 19
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.
APPLICATIONS
• Line current interrupter in telephony applications
• Relay, high speed and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 (SOT54) variant package.
PINNING - TO-92 (SOT54) variant
PIN SYMBOL DESCRIPTION
1 g gate
2 d drain
3 s source
handbook, halfpage
1
2
3
g
MAM144
Fig.1 Simplified outline and symbol.
BSS92
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
V
GSO
I
D
R
DSon
P
tot
y
forward transfer admittance VDS= −25 V; ID= −100 mA 60 200 − mS
fs
drain-source voltage (DC) −−−240 V
gate-source voltage (DC) open drain −−±20 V
drain current (DC) −−−150 mA
drain-source on-state resistance ID= −100 mA; VGS= −10 V − 10 20 Ω
total power dissipation T
≤ 25 °C −−1W
amb
1997 Jun 19 2
Philips Semiconductors Product specification
P-channel enhancement mode
BSS92
vertical D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note to the Limiting values and Thermal characteristics
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum
10 mm × 10 mm.
drain-source voltage (DC) −−240 V
gate-source voltage (DC) open drain −±20 V
drain current (DC) −−150 mA
peak drain current −−600 mA
total power dissipation T
≤ 25 °C; note 1 − 1W
amb
storage temperature −55 +150 °C
operating junction temperature − 150 °C
thermal resistance from junction to ambient note 1 125 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
y
forward transfer admittance VDS= −25 V; ID= −100 mA 60 200 − mS
fs
C
iss
C
oss
C
rss
drain-source breakdown voltage VGS= 0; ID= −250 µA −240 −−V
gate-source threshold voltage VDS=VGS; ID= −1mA −0.8 −−2.8 V
drain-source leakage current VGS= 0; VDS= −60 V −−−200 nA
V
= 0; VDS= −200 V −−−60 µA
GS
gate leakage current VDS= 0; VGS= ±20 V −−±100 nA
drain-source on-state resistance VGS= −10 V; ID= −100 mA − 10 20 Ω
input capacitance VGS= 0; VDS= −25 V; f = 1 MHz − 65 − pF
output capacitance VGS= 0; VDS= −25 V; f = 1 MHz − 20 − pF
reverse transfer capacitance VGS= 0; VDS= −25 V; f = 1 MHz − 6 − pF
Switching times (see Figs 2 and 3)
t
on
turn-on time VGS=0to−10 V; VDD= −50 V;
− 5 − ns
ID= −250 mA
t
off
turn-off time VGS= −10 to 0 V; VDD= −50 V;
− 20 − ns
ID= −250 mA
1997 Jun 19 3
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