Philips BSS89 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BSS89
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC13b
1998 Apr 24
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.
APPLICATIONS
• Line current interruptor in telephone sets
• Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
PINNING - TO-92 variant
PIN SYMBOL DESCRIPTION
1 g gate
2 d drain
3 s source
handbook, halfpage
1
2
3
g
MAM146
Fig.1 Simplified outline and symbol.
BSS89
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
V
GSO
I
D
P
tot
R
DSon
y
forward transfer admittance ID= 400 mA; VDS= 25 V 140 350 − mS
fs
drain-source voltage (DC) −−200 V
gate-source voltage (DC) open drain −−±20 V
drain current (DC) −−300 mA
total power dissipation T
≤ 25 °C −−1W
amb
drain-source on-state resistance ID= 400 mA; VGS=10V − 4.5 6 Ω
1998 Apr 24 2
Philips Semiconductors Product specification
N-channel enhancement mode
BSS89
vertical D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note to the Limiting values and Thermal characteristics
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead
minimum 10 × 10 mm.
drain-source voltage (DC) − 200 V
gate-source voltage (DC) open drain −±20 V
drain current (DC) − 300 mA
peak drain current − 1.2 A
total power dissipation T
≤ 25 °C; note 1 − 1W
amb
storage temperature −55 +150 °C
junction temperature − 150 °C
thermal resistance from junction to ambient note 1 125 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
y
forward transfer admittance ID= 400 mA; VDS= 25 V 140 350 − mS
fs
C
iss
C
oss
C
rss
drain-source breakdown voltage VGS= 0; ID= 250 µA 200 −−V
gate-source threshold voltage VDS=VGS; ID= 1 mA 0.8 − 2.8 V
drain-source leakage current VDS= 60 V; VGS=0 −−200 nA
V
= 200 V; VGS=0 − 0.1 60 µA
DS
gate leakage current VDS= 0; VGS= ±20 V −−±100 nA
drain-source on-state resistance VGS=10V; ID= 400 mA − 4.5 6 Ω
input capacitance VDS= 25 V; VGS= 0; f = 1 MHz − 45 − pF
output capacitance VDS= 25 V; VGS= 0; f = 1 MHz − 15 − pF
reverse transfer capacitance VDS= 25 V; VGS= 0; f = 1 MHz − 3.5 − pF
Switching times (see Figs 2 and 3)
t
on
turn-on time VGS=0to10V; VDD=50V;
− 5 − ns
ID= 250 mA
t
off
turn-off time VGS=10to0V; VDD=50V;
− 15 − ns
ID= 250 mA
1998 Apr 24 3
Loading...