Philips BSS64 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BSS64
NPN high-voltage transistor
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 15
Philips Semiconductors Product specification
NPN high-voltage transistor BSS64
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 80 V).
APPLICATIONS
• High-voltage general purpose and switching
applications
• Intended for application in thick and thin-film circuits.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BSS63.
MARKING
TYPE NUMBER MARKING CODE
(1)
BSS64 AM∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 250 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
NPN high-voltage transistor BSS64
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=90V −−100 nA
I
= 0; VCB=90V; Tj= 150 °C −−50 µA
E
emitter cut-off current IC= 0; VEB=5V − 0.5 200 nA
DC current gain IC= 1 mA; VCE=1V − 60 −
I
= 10 mA; VCE= 1 V 20 80 −
C
= 20 mA; VCE=1V − 55 −
I
C
collector-emitter saturation
voltage
IC= 4 mA; IB= 400 µA −−150 mV
I
= 50 mA; IB=15mA −−200 mV
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 3 − pF
transition frequency IC= 4 mA; VCE= 10 V; f = 100 MHz 60 100 − MHz
1999 Apr 15 3
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