Philips BSS63 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D088
BSS63
PNP high-voltage transistor
Product specification
Supersedes data of 1997 Jul 03
1999 Apr 15
Philips Semiconductors Product specification
PNP high-voltage transistor BSS63
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 100 V).
APPLICATIONS
• High-voltage general purpose
• Switching applications.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: BSS64.
MARKING
TYPE NUMBER MARKING CODE
(1)
BSS63 BM∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−110 V
collector-emitter voltage open base −−100 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−100 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
PNP high-voltage transistor BSS63
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −90 V −−−100 nA
I
= 0; VCB= −90 V; Tj= 150 °C −−−50 µA
E
emitter cut-off current IC= 0; VEB= −6V −−−100 nA
DC current gain IC= −10 mA; VCE= −1V 30 −−
I
=−25 mA; VCE= −1V 30 −−
C
collector-emitter saturation voltage IC= −25 mA; IB= −2.5 mA −−−250 mV
base-emitter saturation voltage IC= −25 mA; IB= −2.5 mA −−−900 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 3 − pF
transition frequency IC= −25 mA; VCE= −5V;
50 85 − MHz
f = 100 MHz
1999 Apr 15 3
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