Philips BSS62, BSS61 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
BSS61; BSS62
PNP Darlington transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04
1997 May 14
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62

FEATURES

High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.

PINNING

PIN DESCRIPTION
1 emitter 2 base 3 collector, connected to case

APPLICATIONS

Industrial high gain amplification.
handbook, halfpage

DESCRIPTION

1
2
2
PNP Darlington transistor in a TO-39 metal package. NPN complements: BSS51 and BSS52.
3
MAM310
1
Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSS61 −−−80 V BSS62 −−−90 V
V
CES
collector-emitter voltage VBE=0
BSS61 −−−60 V BSS62 −−−80 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−−1A total power dissipation T
25 °C −−0.8 W
amb
T
25 °C −−5W
case
DC current gain IC= 500 mA; VCE= 10 V 2000 −− transition frequency IC= 500 mA; VCE= 5 V; f = 100 MHz 200 MHz
3
1997 May 14 2
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BSS61 −−80 V BSS62 −−90 V
collector-emitter voltage VBE=0
BSS61 −−60 V
BSS62 −−80 V emitter-base voltage open collector −−5V collector current (DC) −−1A peak collector current −−2A base current (DC) −−100 mA total power dissipation T
25 °C 0.8 W
amb
T
25 °C 5W
case
storage temperature 65 +150 °C junction temperature 200 °C operating ambient temperature 65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-a th j-c
thermal resistance from junction to ambient in free air 220 K/W thermal resistance from junction to case 35 K/W
1997 May 14 3
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