DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BSS61; BSS62
PNP Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 14
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
APPLICATIONS
• Industrial high gain amplification.
handbook, halfpage
DESCRIPTION
1
2
2
PNP Darlington transistor in a TO-39 metal package.
NPN complements: BSS51 and BSS52.
3
MAM310
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSS61 −−−80 V
BSS62 −−−90 V
V
CES
collector-emitter voltage VBE=0
BSS61 −−−60 V
BSS62 −−−80 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−−1A
total power dissipation T
≤ 25 °C −−0.8 W
amb
T
≤ 25 °C −−5W
case
DC current gain IC= −500 mA; VCE= −10 V 2000 −−
transition frequency IC= −500 mA; VCE= −5 V; f = 100 MHz − 200 − MHz
3
1997 May 14 2
Philips Semiconductors Product specification
PNP Darlington transistors BSS61; BSS62
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BSS61 −−80 V
BSS62 −−90 V
collector-emitter voltage VBE=0
BSS61 −−60 V
BSS62 −−80 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
base current (DC) −−100 mA
total power dissipation T
≤ 25 °C − 0.8 W
amb
T
≤ 25 °C − 5W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 220 K/W
thermal resistance from junction to case 35 K/W
1997 May 14 3