Philips BSS52, BSS51, BSS50 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BSS50; BSS51; BSS52
NPN Darlington transistors
Product specification
Supersedes data of 1997 May 13
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors Product specification
NPN Darlington transistors BSS50; BSS51; BSS52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
APPLICATIONS
• Industrial high gain amplification.
handbook, halfpage
DESCRIPTION
1
2
2
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
3
MAM311
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSS50 −−60 V
BSS51 −−80 V
BSS52 −−90 V
V
CES
collector-emitter voltage VBE=0
BSS50 −−45 V
BSS51 −−60 V
BSS52 −−80 V
I
C
P
tot
h
FE
f
T
collector current −−1A
total power dissipation T
≤ 25 °C −−0.8 W
amb
≤ 25 °C −−5W
T
case
DC current gain IC= 500 mA; VCE=10V 2000 −−
transition frequency IC= 500 mA; VCE= 5 V; f = 100 MHz − 200 − MHz
3
1997 Sep 03 2
Philips Semiconductors Product specification
NPN Darlington transistors BSS50; BSS51; BSS52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BSS50 − 60 V
BSS51 − 80 V
BSS52 − 90 V
collector-emitter voltage VBE=0
BSS50 − 45 V
BSS51 − 60 V
BSS52 − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C − 0.8 W
amb
T
≤ 25 °C − 5W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 220 K/W
thermal resistance from junction to case 35 K/W
1997 Sep 03 3
Loading...