Philips BSS123 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BSS123

N-channel enhancement mode
vertical D-MOS transistor

Product specification
File under Discrete Semiconductors, SC13b

April 1995

Philips Semiconductors Product specification

N-channel enhancement mode vertical
D-MOS transistor

FEATURES

• Direct interface to C-MOS, TTL,
etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope, intended for use as a line
current interruptor in telephone sets
and for applications in relay,
high-speed and line transformer
drivers.

PINNING - SOT23

PIN DESCRIPTION

1 gate
2 source
3 drain

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

DS

I

D

R

DS(on)

V

GS(th)

drain-source voltage 100 V
drain current DC value 150 mA
drain-source on-resistance ID = 120 mA

gate-source threshold voltage ID = 1 mA

PIN CONFIGURATION

dbook, halfpage

VGS = 10 V

VGS = V

3

12

Top view

MSB003

handbook, 2 columns

DS

g

MBB076 - 1

BSS123

6 Ω

2.8 V

d

s

Marking: SA.

Fig.1 Simplified outline and symbol.

April 1995 2

Philips Semiconductors Product specification

N-channel enhancement mode vertical

BSS123

D-MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GSO

I

D

I

DM

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER VALUE UNIT

R

th j-a

Note

1. Device mounted on a FR4 printboard.

drain-source voltage − 100 V
gate-source voltage open drain − 20 V
drain current DC value − 150 mA
drain current peak value − 600 mA
total power dissipation up to T

= 25 °C − 250 mW

amb

storage temperature range −65 150 °C
junction temperature − 150 °C

from junction to ambient (note 1) 500 K/W

April 1995 3