Philips BSR62 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BSR62
PNP Darlington transistor
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 26
Philips Semiconductors Product specification
PNP Darlington transistor BSR62
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
APPLICATIONS
• Industrial applications such as:
– Print hammer
– Solenoid
– Relay and lamp driving.
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: BSR52.
handbook, halfpage
1
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
MAM306
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−90 V
collector-emitter voltage VBE=0 −−80 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
base current (DC) −−0.2 A
total power dissipation T
≤ 25 °C; note 1 − 0.83 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Philips Semiconductors Product specification
PNP Darlington transistor BSR62
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note 1 150 K/W
collector cut-off current VBE= 0; VCE= −80 V −−−50 nA
emitter cut-off current IC= 0; VEB= −4V −−−50 nA
DC current gain VCE= −10 V; see Fig.2
= −150 mA 1000 −−
I
C
I
=−500 mA 2000 −−
C
collector-emitter saturation
voltage
IC= −0.5 A; IB= −0.5 mA −−−1.4 V
I
= −1 A; IB= −4mA −−−1.8 V
C
base-emitter saturation voltage IC= −0.5 A; IB= −0.5 mA −−−2V
I
=−1 A; IB= −4mA −−−2.4 V
C
transition frequency IC= −500 mA; VCE= −5V;
− 200 − MHz
f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
off
turn-on time I
turn-off time −−0.7 µs
= −500 mA; I
Con
I
= 0.5 mA
Boff
= −0.5 mA;
Bon
−−0.5 µs
1999 Apr 26 3
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