Philips BSR57, BSR56 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BSR56; BSR57; BSR58
N-channel FETs
Product specification
File under Discrete Semiconductors, SC07
April 1991
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors in a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for
low-power, chopper or switching
applications in industrial service.
handbook, halfpage
3
g
d
s
PINNING
1 = drain
12
Top view
2 = source
3 = gate
Note
1. Drain and source are
Fig.1 Simplified outline and symbol, SOT23.
interchangeable.
Marking code
BSR56 = M4P
BSR57 = M5P
BSR58 = M6P
QUICK REFERENCE DATA
Drain-source voltage ±V
Total power dissipation up to T
= 40 °CP
amb
Drain current
VDS= 15 V; VGS=0
Gate-source cut-off voltage
V
= 15 V; ID= 0.5 nA
DS
Drain-source resistance (on) at f = 1 kHz
I
= 0; VGS=0 r
D
Feedback capacitance at f = 1 MHz
−VGS= 10 V; VDS=0 C
Turn-off time
VDD= 10 V; VGS=0
= 20 mA; −V
I
D
I
= 10 mA; −V
D
I
= 5 mA; −V
D
= 10 V t
GSM
=6 V t
GSM
=4 V t
GSM
tot
I
DSS
−V
ds on
rs
off
off
off
DS
(P)GS
MAM385
BSR56 BSR57 BSR58
max. 40 40 40 V
max. 250 250 250 mW
> 50 20 8 mA
<−100 80 mA
> 4 2 0.8 V
< 10 6 4 V
< 25 40 60 Ω
< 555pF
< 25 −−ns
<−50 − ns
<−−100 ns
April 1991 2
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