Philips BSR52 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BSR52
NPN Darlington transistor
Product specification
Supersedes data of 1997 May 12
1999 Apr 26
Philips Semiconductors Product specification
NPN Darlington transistor BSR52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
APPLICATIONS
• Industrial high gain amplification.
handbook, halfpage
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package. PNP complement: BSR62.
1
2
3
MAM307
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 90 V
collector-emitter voltage VBE=0 − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 0.83 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Philips Semiconductors Product specification
NPN Darlington transistor BSR52
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note 1 150 K/W
collector cut-off current VBE= 0; VCE=80V −−50 nA
emitter cut-off current IC= 0; VEB=4V −−50 nA
DC current gain VCE= 10 V; see Fig.2
= 150 mA 1000 −−
I
C
I
= 500 mA 2000 −−
C
collector-emitter saturation voltage IC= 0.5 A; IB= 0.5 mA −−1.3 V
I
= 1 A; IB=4mA −−1.6 V
C
base-emitter saturation voltage IC= 0.5 A; IB= 0.5 mA −−1.9 V
I
= 1 A; IB=4mA −−2.2 V
C
transition frequency IC= 500 mA; VCE=5V;
− 200 − MHz
f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
off
turn-on time I
turn-off time −−1300 ns
= 500 mA; I
Con
I
= −0.5 mA
Boff
= 0.5 mA;
Bon
−−500 ns
1999 Apr 26 3
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