Philips BSR31, BSR33 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BSR30; BSR31; BSR33
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 01
1999 Apr 26
Philips Semiconductors Product specification
PNP medium power transistors BSR30; BSR31; BSR33
FEATURES
PINNING
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Telephony and general industrial applications
• Thick and thin-film circuits.
handbook, halfpage
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complements: BSR40; BSR41 and BSR43.
MARKING
TYPE NUMBER MARKING CODE
BSR30 BR1
BSR31 BR2
BSR33 BR4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR30; BSR31 −−70 V
BSR33 −−90 V
V
CEO
collector-emitter voltage open base
BSR30; BSR31 −−60 V
BSR33 −−80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.35 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 26 2
Philips Semiconductors Product specification
PNP medium power transistors BSR30; BSR31; BSR33
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note 1 93 K/W
thermal resistance from junction to soldering point 13 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= −60 V −−100 nA
I
= 0; VCB= −60 V; Tj= 150 °C −−50 µA
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain IC= −100 µA; VCE= −5 V; note 1
BSR30 10 −
BSR31; BSR33 30 −
DC current gain I
= −100 mA; VCE= −5 V; note 1
C
BSR30 40 120
BSR31; BSR33 100 300
DC current gain I
= −500 mA; VCE= −5 V; note 1
C
BSR30 30 −
BSR31; BSR33 50 −
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA; note 1 −−0.25 V
I
= −500 mA; IB= −50 mA; note 1 −−0.5 V
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−1V
=−500 mA; IB= −50 mA; note 1 −−1.2 V
I
C
transition frequency IC= −50 mA; VCE= −10 V;
100 − MHz
f = 100 MHz
Note
1. Pulse test: t
= 300 µs; δ < 0.01.
p
1999 Apr 26 3
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