Philips BSR18A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BSR18A
PNP switching transistor
Product specification
Supersedes data of September 1994
1997 May 28
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
PNP switching transistor BSR18A
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• High-speed saturated switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
handbook, halfpage
3
3
NPN complement: BSR17A.
1
MARKING
TYPE NUMBER MARKING CODE
BSR18A T92
Top view
21
MAM256
2
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
t
CBO
CEO
C
tot
FE
T
off
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
collector current (DC) −−100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
DC current gain IC= −10 mA; VCE= −1 V 100 300
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
turn-off time I
= −10 mA; I
Con
= −1 mA; I
Bon
=1mA − 300 ns
Boff
1997 May 28 2
Philips Semiconductors Product specification
PNP switching transistor BSR18A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 May 28 3
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