Philips BSR16 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BSR15; BSR16
PNP switching transistors
Product specification
Supersedes data of 1997 May 14
1999 Apr 15
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Medium power switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: BSR13 and BSR14.
MARKING
TYPE NUMBER MARKING CODE
(1)
BSR15 T7∗
BSR16 T8∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
CBO
CEO
collector-base voltage open emitter −−60 V
collector-emitter voltage open base
BSR15 −−40 V
BSR16 −−60 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current
BSR15 I
= 0; VCB= −50 V −−20 nA
E
I
= 0; VCB= −50 V; Tj= 150 °C −−20 µA
E
collector cut-off current
BSR16 IE= 0; VCB= −50 V −−10 nA
= 0; VCB= −50 V; Tj= 150 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.1 mA; VCE= −10 V
BSR15 35 −
BSR16 75 −
DC current gain I
= −1 mA; VCE= −10 V
C
BSR15 50 −
BSR16 100 −
DC current gain I
= −10 mA; VCE= −10 V
C
BSR15 75 −
BSR16 100 −
DC current gain I
DC current gain I
= −150 mA; VCE= −10 V; note 1 100 300
C
= −500 mA; VCE= −10 V; note 1
C
BSR15 30 −
BSR16 50 −
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA −−400 mV
I
= −500 mA; IB= −50 mA −−1.6 V
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA −−1.3 V
I
= −500 mA; IB= −50 mA −−2.6 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V; f = 100 MHz 200 − MHz
1999 Apr 15 3
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