Philips BSR16 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BSR15; BSR16
PNP switching transistors
Product specification Supersedes data of 1997 May 14
1999 Apr 15
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
FEATURES
High current (max. 600 mA)
Low voltage (max. 60 V).
APPLICATIONS
Medium power switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package. NPN complements: BSR13 and BSR14.
MARKING
TYPE NUMBER MARKING CODE
(1)
BSR15 T7 BSR16 T8
Note
1. = p : Made in Hong Kong.= t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base 2 emitter 3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V
CBO CEO
collector-base voltage open emitter −−60 V collector-emitter voltage open base
BSR15 −−40 V BSR16 −−60 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V collector current (DC) −−600 mA peak collector current −−800 mA peak base current −−200 mA total power dissipation T
25 °C 250 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current
BSR15 I
= 0; VCB= 50 V −−20 nA
E
I
= 0; VCB= 50 V; Tj= 150 °C −−20 µA
E
collector cut-off current
BSR16 IE= 0; VCB= 50 V −−10 nA
= 0; VCB= 50 V; Tj= 150 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB= 5V −−50 nA DC current gain IC= 0.1 mA; VCE= 10 V
BSR15 35 BSR16 75
DC current gain I
= 1 mA; VCE= 10 V
C
BSR15 50 BSR16 100
DC current gain I
= 10 mA; VCE= 10 V
C
BSR15 75
BSR16 100 DC current gain I DC current gain I
= 150 mA; VCE= 10 V; note 1 100 300
C
= 500 mA; VCE= 10 V; note 1
C
BSR15 30
BSR16 50 collector-emitter saturation
voltage
IC= 150 mA; IB= 15 mA −−400 mV I
= 500 mA; IB= 50 mA −−1.6 V
C
base-emitter saturation voltage IC= 150 mA; IB= 15 mA −−1.3 V
I
= 500 mA; IB= 50 mA −−2.6 V
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz 8pF emitter capacitance IC=ic= 0; VEB= 2 V; f = 1 MHz 30 pF transition frequency IC= 50 mA; VCE= 20 V; f = 100 MHz 200 MHz
1999 Apr 15 3
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