Philips BSR13 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
M3D088
BSR13; BSR14
NPN switching transistors
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 15
Philips Semiconductors Product specification
NPN switching transistors BSR13; BSR14
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
MARKING
TYPE NUMBER MARKING CODE
BSR13 U7∗
BSR14 U8∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR13 − 60 V
BSR14 − 75 V
V
CEO
collector-emitter voltage open base
BSR13 − 30 V
BSR14 − 40 V
V
EBO
emitter-base voltage open collector
BSR13 − 5V
BSR14 − 6V
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector current (DC) − 800 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
NPN switching transistors BSR13; BSR14
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current
BSR13 I
= 0; VCB=50V − 30 nA
E
I
= 0; VCB=50V; Tj= 150 °C − 10 µA
E
collector cut-off current
BSR14 IE= 0; VCB=60V − 10 nA
I
= 0; VCB=60V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=5V
BSR13 − 30 nA
BSR14 − 10 nA
DC current gain IC= 0.1 mA; VCE= 10 V; note 1 35 −
I
= 1 mA; VCE= 10 V; note 1 50 −
C
I
= 10 mA; VCE= 10 V; note 1 75 −
C
= 150 mA; VCE= 10 V; note 1 100 300
I
C
I
= 150 mA; VCE= 1 V; note 1 50 −
C
DC current gain I
= 500 mA; VCE= 10 V; note 1
C
BSR13 30 −
BSR14 40 −
collector-emitter saturation voltage IC= 150 mA; IB=15mA
BSR13 − 400 mV
BSR14 − 300 mV
collector-emitter saturation voltage I
= 500 mA; IB=50mA
C
BSR13 − 1.6 V
BSR14 − 1V
base-emitter saturation voltage IC= 150 mA; IB=15mA
BSR13 − 1.3 V
BSR14 0.6 1.2 V
base-emitter saturation voltage I
= 500 mA; IB=50mA
C
BSR13 − 2.6 V
BSR14 − 2V
1999 Apr 15 3
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