Philips BSP62, BSP61, BSP60 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
BSP60; BSP61; BSP62
PNP Darlington transistors
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 29
Philips Semiconductors Product specification
PNP Darlington transistors BSP60; BSP61; BSP62
FEATURES
• High current (max. 0.5 A)
PINNING
PIN DESCRIPTION
• Low voltage (max. 80 V)
• Integrated diode and resistor.
2,4 collector
APPLICATIONS
• Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp drivers.
DESCRIPTION
PNP Darlington transistor in a SOT223 plastic package.
NPN complements: BSP50, BSP51 and BSP52.
Top view
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
3 emitter
4
123
MAM266
2, 4
1
3
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSP60 −−60 V
BSP61 −−80 V
BSP62 −−90 V
V
CES
collector-emitter voltage VBE=0
BSP60 −−45 V
BSP61 −−60 V
BSP62 −−80 V
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−0.5 A
peak collector current −−1.5 A
base current (DC) −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.25 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
2
Handbook”.
.
1999 Apr 29 2
Philips Semiconductors Product specification
PNP Darlington transistors BSP60; BSP61; BSP62
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note 1 98 K/W
thermal resistance from junction to solder point 17 K/W
“Thermal considerations for the SOT223 in the General Part of associated
collector cut-off current
BSP60 V
BSP61 V
BSP62 V
= 0; VCE= −45 V −−−50 nA
BE
= 0; VCE= −60 V −−−50 nA
BE
= 0; VCE= −80 V −−−50 nA
BE
emitter cut-off current IC= 0; VEB= −4V −−−50 nA
DC current gain VCE= −10 V; note 1; see Fig.2
I
= −150 mA 1000 −−
C
I
=−500 mA 2000 −−
C
collector-emitter saturation
voltage
IC= −500 mA; IB= −0.5 mA −−−1.3 V
= −500 mA; IB= −0.5 mA;
I
C
−−−1.3 V
Tj= 150 °C
base-emitter saturation voltage IC= −500 mA; IB= −0.5 mA −−−1.9 V
transition frequency IC= −500 mA; VCE= −5V;
− 200 − MHz
f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
off
turn-on time I
turn-off time − 1500 − ns
= −500 mA; I
Con
I
= 0.5 mA
Boff
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 29 3
= −0.5 mA;
Bon
− 400 − ns
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