Philips bsp 52 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
BSP50; BSP51; BSP52
NPN Darlington transistors
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 23
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 base
2,4 collector
3 emitter
APPLICATIONS
• Industrial high gain amplification.
4
DESCRIPTION
1
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
123
Top view
MAM265
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSP50 − 60 V
BSP51 − 80 V
BSP52 − 90 V
V
CES
collector-emitter voltage VBE=0
BSP50 − 45 V
BSP51 − 60 V
BSP52 − 80 V
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.25 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2, 4
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”
.
“Thermal considerations for the SOT223 in the General Part of associated
1999 Apr 23 2
2
.
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
off
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to solder point 17 K/W
“Thermal considerations for the SOT223 in the General Part of associated
“.
collector cut-off current
BSP50 V
BSP51 V
BSP52 V
= 0; VCE=45V −−50 nA
BE
= 0; VCE=60V −−50 nA
BE
= 0; VCE=80V −−50 nA
BE
emitter cut-off current IC= 0; VEB=4V −−50 nA
DC current gain VCE= 10 V; note 1; see Fig.2
I
= 150 mA 1000 −−
C
I
= 500 mA 2000 −−
C
collector-emitter saturation
voltage
IC= 500 mA; IB= 0.5 mA −−1.3 V
= 500 mA; IB= 0.5 mA;
I
C
−−1.3 V
Tj= 150 °C
base-emitter saturation
IC= 500 mA; IB= 0.5 mA −−1.9 V
voltage
transition frequency IC= 500 mA; VCE= 5 V; f = 100 MHz − 200 − MHz
turn-on time I
turn-off time − 1300 − ns
= 500 mA; I
Con
I
= −0.5 mA
Boff
= 0.5 mA;
Bon
− 500 − ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 23 3
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