Philips BSP43, BSP41, BAS40-04W, BAS40W, BAS40-05W Datasheet
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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BSP41; BSP43
NPN medium power transistors
Product specification
Supersedes data of 1997 Sep 05
1999 Apr 26
Philips Semiconductors Product specification
NPN medium power transistors BSP41; BSP43
FEATURES
• High current (max. 1 A)
PINNING
PIN DESCRIPTION
• Low voltage (max. 80 V).
2,4 collector
APPLICATIONS
• Telephony and general industrial applications
• Thick and thin-film circuits.
handbook, halfpage
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BSP31; BSP32 and BSP33.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
3 emitter
123
Top view
4
2, 4
1
3
MAM287
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSP41 − 70 V
BSP43 − 90 V
V
CEO
collector-emitter voltage open base
BSP41 − 60 V
BSP43 − 80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 0.2 A
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
.
Handbook”.
1999 Apr 26 2
Philips Semiconductors Product specification
NPN medium power transistors BSP41; BSP43
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note 1 93 K/W
thermal resistance from junction to soldering point 12 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB=60V − 100 nA
= 0; VCB=60V; Tj= 150 °C − 50 µA
I
E
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 100 µA; VCE= 5 V; note 1 30 −
I
= 100 mA; VCE= 5 V; note 1 100 300
C
I
= 500 mA; VCE= 5 V; note 1 50 −
C
collector-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 0.25 V
I
= 500 mA; IB= 50 mA; note 1 − 0.5 V
C
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 1V
= 500 mA; IB= 50 mA; note 1 − 1.2 V
I
C
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 100 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.01.
p
1999 Apr 26 3
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