Philips BSP33, BSP32, BSP31 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BSP31; BSP32; BSP33
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 26
Philips Semiconductors Product specification
PNP medium power transistors BSP31; BSP32; BSP33
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• Telephony and general industrial applications.
DESCRIPTION
handbook, halfpage
4
2, 4
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BSP41 and BSP43.
123
Top view
1
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSP31 −−70 V
BSP32; BSP33 −−90 V
V
CEO
collector-emitter voltage open base
BSP31 −−60 V
BSP32; BSP33 −−80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−200 mA
total power dissipation T
=25°C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 26 2
2
.
Philips Semiconductors Product specification
PNP medium power transistors BSP31; BSP32; BSP33
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels)
t
on
t
off
thermal resistance from junction to ambient note 1 93 K/W
thermal resistance from junction to soldering point 12 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −60 V −−100 nA
= 0; VCB= −60 V; Tj= 150 °C −−50 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain
BSP32 I
= −100 µA; VCE= −5 V; note 1 10 −
C
I
= −100 mA; VCE= −5 V; note 1 40 120
C
I
= −500 mA; VCE= −5 V; note 1 30 −
C
DC current gain
BSP31; BSP33 I
= −100 µA; VCE= −5 V; note 1 30 −
C
= −100 mA; VCE= −5 V; note 1 100 300
I
C
I
= −500 mA; VCE= −5 V; note 1 50 −
C
collector-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−250 mV
= −500 mA; IB= −50 mA; note 1 −−500 mV
I
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−1V
I
=−500 mA; IB= −50 mA; note 1 −−1.2 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 20 pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 1 MHz − 120 pF
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz 100 − MHz
turn-on time I
= −100 mA; I
Con
= −5 mA; I
Bon
=5mA − 500 ns
Boff
turn-off time − 650 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.01.
p
1999 Apr 26 3
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