Philips BSP304A, BSP304 Datasheet
DATA SH EET
Product specification
File under Discrete Semiconductors, SC07
1995 Apr 07
DISCRETE SEMICONDUCTORS
Philips Semiconductors
BSP304; BSP304A
P-channel enhancement mode
vertical D-MOS transistors
1995 Apr 07 2
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
FEATURES
• Direct interface to C-MOS, TTL etc.
• High speed switching
• No secondary breakdown.
APPLICATIONS
• Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
PINNING - TO-92 variant
PIN SYMBOL DESCRIPTION
BSP304
1 g gate
2 d drain
3 s source
BSP304A
1 s source
2 g gate
3 d drain
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM144
1
3
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage (DC) −−300 V
V
GSO
gate-source voltage (DC) open drain −±20 V
V
GSth
gate-source threshold voltage ID= −1 mA; VDS=V
GS
−1.7 −2.55 V
I
D
drain current (DC) −−170 mA
R
DSon
drain-source on-state resistance ID= −170 mA;
VGS= −10 V
− 17 Ω
P
tot
total power dissipation up to T
amb
=25°C − 1W
1995 Apr 07 3
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm
2
.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage (DC) −−300 V
V
GSO
gate-source voltage (DC) open drain −±20 V
I
D
drain current (DC) −−170 mA
I
DM
peak drain current −−0.75 A
P
tot
total power dissipation up to T
amb
=25°C; note 1 − 1W
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 125 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage VGS= 0; ID= −10 µA −300 −−V
V
GSth
gate-source threshold voltage VDS=VGS; ID= −1mA −1.7 −−2.55 V
I
DSS
drain-source leakage current VGS= 0; VDS= −240 V −−−100 nA
I
GSS
gate leakage current VGS= ±20 V; VDS=0 −−±100 nA
R
DSon
drain-source on-state resistance VGS= −10 V; ID= −170 mA −−17 Ω
y
fs
forward transfer admittance VDS= −25 V; ID= −170 mA 100 −−mS
C
iss
input capacitance VGS= 0; VDS= −25 V; f = 1 MHz − 60 90 pF
C
oss
output capacitance VGS= 0; VDS= −25 V; f = 1 MHz − 15 30 pF
C
rss
reverse transfer capacitance VGS= 0; VDS= −20 V; f = 1 MHz − 515pF
Switching times (see Figs 2 and 3)
t
on
turn-on time VGS=0to−10 V; VDD= −50 V;
ID= −250 mA
− 510ns
t
off
turn-off time VGS= −10 to 0 V; VDD= −50 V;
ID= −250 mA
− 15 30 ns
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