Philips BSP205 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BSP205
P-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors Product specification
P-channel enhancement mode vertical
D-MOS transistor
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope and
intended for use in relay, high-speed
and line-transformer drivers.
FEATURES
• Very low R
DS(on)
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown
PINNING - SOT223
1 = gate
2 = drain
3 = source
4 = drain
QUICK REFERENCE DATA
Drain-source voltage −V
Drain current (DC) −I
Drain-source ON-resistance
−I
= 200 mA; −VGS= 10 V R
D
Gate threshold voltage −V
DS
D
DS(on)
GS(th)
BSP205
max. 60 V
max. 275 mA
max. 10 Ω
max. 3.5 V
PIN CONFIGURATION
Marking code
BSP205
handbook, halfpage
Top view
Fig.1 Simplified outline and symbol.
4
123
MAM121
d
g
s
April 1995 2
Philips Semiconductors Product specification
P-channel enhancement mode vertical
BSP205
D-MOS transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage −V
Gate-source voltage (open drain) ±V
Drain current (DC) −I
Drain current (peak) −I
Total power dissipation up to T
=25°C (note 1) P
amb
Storage temperature range T
Junction temperature T
DS
GSO
D
DM
tot
stg
j
THERMAL RESISTANCE
From junction to ambient (note 1) R
th j-a
Note
1. Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.5 mm; mounting pad for the drain lead
min. 6 cm
2
.
max. 60 V
max. 20 V
max. 275 mA
max. 550 mA
max. 1.5 W
−65 to 150 °C
max. 150 °C
= 83.3 K/W
April 1995 3
Philips Semiconductors Product specification
P-channel enhancement mode vertical
D-MOS transistor
CHARACTERISTICS
=25°C unless otherwise specified
T
j
Drain-source breakdown voltage
−ID=10µA; VGS=0 −V
Drain-source leakage current
−V
= 48 V; VGS=0 −I
DS
Gate-source leakage current
± VGS= 20 V; VDS=0 ±I
Gate threshold voltage
−I
= 1 mA; VDS= V
D
Drain-source ON-resistance
−I
= 200 mA ; −VGS= 10 V R
D
Transfer admittance
= 200 mA; −VDS= 15 V Yfs
−I
D
GS
DSS
GSS
−V
DS(on)
(BR)DSS
GS(th)
BSP205
min. 60 V
max. 1.0 µA
max. 100 nA
min.
max.
typ.
max.
min.
typ.
1.5
3.5VV
7.510Ω
Ω
60
125mSmS
Input capacitance at f = 1 MHz;
= 10 V; VGS=0 C
−V
DS
Output capacitance at f = 1 MHz;
= 10 V; VGS=0 C
−V
DS
Feedback capacitance at f = 1 MHz;
= 10 V; VGS=0 C
−V
DS
Switching times (see Figs 2 and 3)
−I
= 200 mA; −VDD= 50 V;
D
−VGS= 0 to 10 V t
iss
oss
rss
on
t
off
typ.
max.
typ.
max.
typ.
max.
typ.
max.
typ.
max.
3045pF
pF
2030pF
pF
510pF
pF
36ns
ns
1015ns
ns
April 1995 4
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