Philips BSP20, BSP19 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D087
BSP19; BSP20
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Mar 03
1999 Jun 01
Philips Semiconductors Product specification
NPN high-voltage transistors BSP19; BSP20
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• High voltage (max. 350 V).
2, 4 collector
APPLICATIONS
• Switching and amplification
• Especially used in telephony and automotive
applications.
handbook, halfpage
DESCRIPTION
NPN transistor in a SOT223 plastic package.
PNP complement: BSP16.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
3 emitter
123
Top view
4
2, 4
1
3
MAM287
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSP19 − 400 V
BSP20 − 300 V
V
CEO
collector-emitter voltage open base
BSP19 − 350 V
BSP20 − 250 V
V
EBO
I
C
I
B
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
2
.
Handbook”.
1999 Jun 01 2
Philips Semiconductors Product specification
NPN high-voltage transistors BSP19; BSP20
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 104 K/W
thermal resistance from junction to soldering point 23 K/W
2
.
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCE= 300 V − 20 nA
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain VCE=10V; IC=20mA 40 −
collector-emitter saturation voltage IC= 50 mA; IB=4mA − 0.5 V
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2.5 pF
transition frequency VCE=10V; IC= 10 mA; f = 100 MHz 70 − MHz
1999 Jun 01 3
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