Philips BSP16 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D087
BSP16
PNP high-voltage transistor
Product specification
Supersedes data of 1998 Aug 04
1999 Apr 28
Philips Semiconductors Product specification
PNP high-voltage transistor BSP16
FEATURES
• High voltage (max. 350 V).
PINNING
PIN DESCRIPTION
1 base
APPLICATIONS
• Switching and amplification
2, 4 collector
3 emitter
• Especially used in telephony and automotive
applications.
handbook, halfpage
DESCRIPTION
PNP high-voltage transistor in a SOT223 plastic package.
NPN complements: BSP19 and BSP20.
123
Top view
4
2, 4
1
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−350 V
collector-emitter voltage open base −−300 V
emitter-base voltage open collector −−6V
collector current (DC) −−200 mA
base current (DC) −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.28 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 28 2
2
.
Philips Semiconductors Product specification
PNP high-voltage transistor BSP16
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 97 K/W
thermal resistance from junction to soldering point 16 K/W
2
.
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −280 V −−100 nA
emitter cut-off current IC= 0; VEB= −6V −−100 nA
DC current gain IC= −50 mA; VCE= −10 V 30 120
collector-emitter saturation voltage IC= −50 mA; IB= −5mA −−2V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 15 pF
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 15 − MHz
1999 Apr 28 3
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