Philips bsp145 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BSP145
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 24
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High speed switching
• No secondary breakdown.
APPLICATIONS
• Intended for applications in relay, high speed and line
transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
PINNING - SOT223
PIN SYMBOL DESCRIPTION
1 g gate
2 d drain
3 s source
4 d drain
BSP145
handbook, halfpage
4
g
123
Top view
Fig.1 Simplified outline and symbol.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
MAM054
CAUTION
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
DS
V
GSO
V
GSth
I
D
R
DSon
P
tot
drain-source voltage − 450 V
gate-source voltage open drain −±20 V
gate-source threshold voltage ID= 1 mA; VDS=V
drain current − 250 mA
drain-source on-state resistance ID= 100 mA; VGS= 10 V 10 14 Ω
total power dissipation up to T
=25°C − 1.5 W
amb
GS
34V
1995 Apr 24 2
Philips Semiconductors Product specification
N-channel enhancement mode
BSP145
vertical D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on an epoxy printed-circuit board, 40 × 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm
drain-source voltage − 450 V
gate-source voltage open drain −±20 V
drain current − 250 mA
peak drain current − 1A
total power dissipation up to T
=25°C; note 1 − 1.5 W
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
thermal resistance from junction to ambient note 1 83.3 K/W
2
.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
forward transfer admittance VDS= 25 V; ID=250 mA 200 −−mS
y
fs
C
iss
C
oss
C
rss
drain-source breakdown voltage VGS= 0; ID=10µA 450 −−V
gate-source threshold voltage VDS=VGS; ID=1mA 2 3 4 V
drain-source leakage current VGS= 0; VDS= 350 V −−1µA
gate leakage current VDS= 0; VGS= ±20 V −−±100 nA
drain-source on-state resistance VGS=10V; ID= 100 mA − 10 14 Ω
input capacitance VGS= 0; VDS=25V; f=1MHz − 90 120 pF
output capacitance VGS= 0; VDS=25V; f=1MHz − 25 35 pF
reverse transfer capacitance VGS= 0; VDS=25V; f=1MHz − 25pF
Switching times (see Figs 2 and 3)
t
on
turn-on time VGS=0to10V; VDD= 200 V;
−−10 ns
ID= 100 mA
t
off
turn-off time VGS=10to0V; VDD=200 V;
−−100 ns
ID= 100 mA
1995 Apr 24 3
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