Philips BSP090 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BSP090

P-channel enhancement mode
vertical D-MOS transistor

Product specification
Supersedes data of 1997 Jan 20
File under Discrete Semiconductors, SC07

1997 Mar 13

Philips Semiconductors Product specification

P-channel enhancement mode vertical
D-MOS transistor

FEATURES

• High speed switching

• No secondary breakdown

• Very low on-state resistance.

APPLICATIONS

• Motor and actuator drivers

• Power management

• Synchronized rectification.

DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.

CAUTION

The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.

PINNING - SOT223

PIN SYMBOL DESCRIPTION

1 g gate
2 d drain
3 s source
4 d drain

handbook, halfpage

123

Top view

4

g

MAM121

BSP090

d

s

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
V
I

D

R
P

DS
SD
GS
GSth

DSon
tot

drain-source voltage (DC) −−30 V
source-drain diode forward voltage IS= −1.25 A −−1.3 V
gate-source voltage (DC) −±20 V
gate-source threshold voltage ID= −1 mA; VDS=V

−1 −2.8 V

GS

drain current (DC) Ts= 100 °C −−5.7 A
drain-source on-state resistance ID= −2.8 A; VGS= −10 V − 0.09 Ω
total power dissipation Ts= 100 °C − 5W

1997 Mar 13 2

Philips Semiconductors Product specification

P-channel enhancement mode vertical

BSP090

D-MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Notes

1. T

s

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on a printed-circuit board with a R

4. Device mounted on a printed-circuit board with a R

drain-source voltage (DC) −−30 V
gate-source voltage (DC) −±20 V
drain current (DC) Ts= 100 °C; note 1 −−5.7 A
peak drain current note 2 −−22 A
total power dissipation Ts= 100 °C − 5W

=25°C; note 3 − 3.3 W

T

amb

=25°C; note 4 − 1.25 W

T

amb

storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source current (DC) Ts= 100 °C −−3.8 A
peak pulsed source current note 2 −−15 A

is the temperature at the soldering point of the drain lead.

(ambient to tie-point) of 27.5 K/W.

th a-tp

(ambient to tie-point) of 90 K/W.

th a-tp

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 10 K/W

1997 Mar 13 3

Philips Semiconductors Product specification

P-channel enhancement mode vertical
D-MOS transistor

150

MGD716

Ts (°C)

15

handbook, halfpage

P

tot

(W)

10

5

0

0

50 100 200

2

−10

handbook, halfpage

I

D

(A)

−10

−1

−1

−10

−2

−10

−1

−10

BSP090

MGD727

(1)

t

P

t

p

T

p

δ =

T

t

−1

−10 −10

DC

10 µs
50 µs

100 µs
1 ms

10 ms
100 ms

VDS (V)

t

p =

2

Fig.2 Power derating curve.

δ = 0.01; Ts= 100 °C.
(1) R

DSon

limitation.

Fig.3 SOAR.

1997 Mar 13 4