Philips BSN205A, BSN205 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BSN205; BSN205A
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors Product specification
N-channel enhancement mode vertical
D-MOS transistor
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
variant envelope. Designed primarily
as a line current interrupter in
telephone sets, it can also be applied
in other applications such as in relays,
line and high speed transformer
drivers etc.
FEATURES
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown
• Low R
DS(on)
QUICK REFERENCE DATA
Drain-source voltage V
Gate-source voltage (open drain) ± V
Drain current (DC) I
Total power dissipation up to
T
=25°CP
amb
Drain-source ON-resistance
= 400 mA; VGS=10V R
I
D
Transfer admittance
= 400 mA; VDS=25V Yfs
I
D
PINNING - TO-92 VARIANT
BSN205 BSN205A
1 = gate 1 = source
2 = drain 2 = gate
3 = source 3 = drain
BSN205; BSN205A
DS
GSO
D
tot
DS(on)
max. 200 V
max. 20 V
max. 300 mA
max. 1 W
typ.
4.56Ω
max.
min.
typ.
200
350mSmS
Ω
PIN CONFIGURATION
Note: various pinout configurations available.
handbook, halfpage
1
2
3
Fig.1 Simplified outline and symbol.
MAM148
d
g
s
April 1995 2
Philips Semiconductors Product specification
N-channel enhancement mode vertical
BSN205; BSN205A
D-MOS transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage V
Gate-source voltage (open drain) ± V
Drain current (DC) I
Drain current (peak) I
Total power dissipation up to T
=25°C (note 1) P
amb
Storage temperature range T
Junction temperature T
DS
GSO
D
DM
tot
stg
j
THERMAL RESISTANCE
From junction to ambient (note 1) R
th j-a
Note
1. Transistor mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead
min. 10 mm × 10 mm.
max. 200 V
max. 20 V
max. 300 mA
max. 1.2 A
max. 1 W
−65 to + 150 °C
max. 150 °C
= 125 K/W
CHARACTERISTICS
=25°C unless otherwise specified
T
j
Drain-source breakdown voltage
=10µA; VGS=0 V
D
Drain-source leakage current
= 160 V; VGS=0 I
DS
Gate-source leakage current
= 20 V; VDS=0 I
GS
Gate threshold voltage
= 1 mA; VDS=V
I
D
GS
Drain-source ON-resistance
= 400 mA; VGS=10V R
I
D
Transfer admittance
= 400 mA; VDS= 25 V | Yfs|
I
D
(BR) DSS
DSS
GSS
V
GS(th)
DS(on)
min. 200 VI
max. 1 µAV
max. 100 nAV
min.
max.
typ.
max.
min.
typ.
0.8
2.8VV
46Ω
Ω
200
350mSmS
Input capacitance at f = 1 MHz
= 25 V; VGS=0 C
V
DS
April 1995 3
iss
typ.
max.
4560pF
pF
Loading...