Philips BSN20 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BSN20
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b
1997 Jun 18
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.
APPLICATIONS
• Thin and thick film circuits
• General purpose fast switching applications.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT23 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
handbook, halfpage
Top view
Marking code: M8p.
3
g
21
MAM273
Fig.1 Simplified outline and symbol.
BSN20
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
I
R
V
D
DS
DSon
GSth
drain-source voltage (DC) 50 V
drain current (DC) 100 mA
drain-source on-state resistance ID= 100 mA; VGS=10V 15 Ω
gate-source threshold voltage ID= 1 mA; VGS=V
DS
1.8 V
1997 Jun 18 2
Philips Semiconductors Product specification
N-channel enhancement mode
BSN20
vertical D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
drain-source voltage (DC) − 50 V
gate-source voltage (DC) open drain −±20 V
drain current (DC) − 100 mA
peak drain current − 300 mA
total power dissipation up to T
up to T
=25°C; note 1 − 300 mW
amb
=25°C; note 2 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
thermal resistance from junction to ambient note 1 430 K/W
note 2 500 K/W
Notes to the Limiting values and Thermal characteristics
1. Device mounted on a ceramic substrate, 10 × 8 × 0.7 mm.
2. Device mounted on a printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
y
forward transfer admittance VDS= 10 V; ID= 100 mA 40 80 − mS
fs
C
iss
C
oss
C
rss
drain-source breakdown voltage VGS= 0; ID=10µA50−−V
gate-source threshold voltage VDS=VGS; ID= 1 mA 0.4 − 1.8 V
drain-source leakage current VGS= 0; VDS=40V −−1µA
gate-source leakage current VDS= 0; VGS= ±20 V −−±100 nA
drain-source on-state resistance VGS= 10 V; ID= 100 mA − 815Ω
=5V; ID= 100 mA − 14 20 Ω
V
GS
= 2.5 V; ID=10mA − 18 30 Ω
V
GS
input capacitance VGS= 0; VDS=10V; f=1MHz − 815pF
output capacitance VGS= 0; VDS=10V; f=1MHz − 715pF
reverse transfer capacitance VGS= 0; VDS=10V; f=1MHz − 25pF
Switching times
t
on
turn-on time VGS= 0 to 10 V; VDD=20V;
− 25ns
ID= 100 mA
t
off
turn-off time VGS=10to0V; VDD=20V;
− 510ns
ID= 100 mA
1997 Jun 18 3
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