Philips BSH301 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BSH301

Dual N-channel enhancement
mode MOS transistor

Objective specification

1999 Apr 06

Philips Semiconductors Objective specification

Dual N-channel enhancement mode MOS transistor BSH301

FEATURES

• 40 mΩ on-state resistance at 2.5 V gate drive

• R

rating down to 1.8 V

DSon

• ESD gate protection.

APPLICATIONS

• Li-Ion safety switch

• Power management.

handbook, halfpage

8

5

d1s2s

2

g

2

d1s1s

DESCRIPTION

Two N-channel enhancement mode MOS transistors in an

1

4

MAM423

Fig.1 Simplified outline (SOT530) and symbol.

1

8-pin plastic TSSOP8 package.

PINNING SOT530 (TSSOP8)

PIN SYMBOL DESCRIPTION

1 d1 drain 1

The device is supplied in an antistatic package. The gate
inputs must be protected against static discharge during
transport or handling.

CAUTION

2 s1 source 1
3 s1 source 1
4 g1 gate 1
5 g2 gate 2
6 s2 source 2
7 s2 source 2
8 d1 drain 1

QUICK REFERENCE DATA

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

SD

V

GS

V

GSth

I

D

R

DSon

P

tot

drain-source voltage (DC) − 20 V
source-drain diode forward voltage VGD= 0; IS= 1.25 A − 1V
gate-source voltage (DC) −±8V
gate-source threshold voltage VDS=VGS; ID=1mA 0.4 − V
drain current (DC) TS=80°C; note 1 − 5A
drain-source on-state resistance VGS= 2.5 V; ID= 3.5 A − 0.04 Ω
total power dissipation TS=80°C − 1.75 W

g

1

Note

1. T

is the temperature at the soldering of the drain lead.

S

Full Data Sheet will appear: on WWW (Internet; details in front section/back of this HB/CD-ROM) or updated Loose leaf

1999 Apr 06 2