Philips BSH299 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BSH299
P-channel enhancement mode
MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1998 Feb 18
Philips Semiconductors Objective specification
P-channel enhancement mode MOS transistor
FEATURES
• Low threshold voltage
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
APPLICATIONS
• Power management
• Battery powered applications e.g. cellular phones
• General purpose switch.
DESCRIPTION
P-channel enhancement mode MOS transistor in a
SOT363 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT363
PIN SYMBOL DESCRIPTION
1 d drain
2 d drain
3 g gate
4 s source
5 d drain
6 d drain
handbook, halfpage
BSH299
4
56
g
132
Top view
MAM396
Fig.1 Simplified outline and symbol.
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC) −−50 V
gate-source voltage (DC) open drain −±20 V
gate-source threshold voltage ID= −1 mA; VDS=V
GS
−0.8 −2V
drain current (DC) Ts=80°C −−0.2 A
drain-source on-state resistance ID= −0.13 A; VGS= −10 V − 10 Ω
total power dissipation Ts=80°C − 0.7 W
1998 Feb 18 2
Philips Semiconductors Objective specification
P-channel enhancement mode MOS transistor
BSH299
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
I
P
T
T
D
DM
DS
GSO
tot
stg
j
drain-source voltage (DC) −−50 V
gate-source voltage (DC) open drain −±20 V
drain current (DC) Ts= 80 °C; note 1 −−0.2 A
peak drain current note 2 −−0.8 A
total power dissipation Ts=80°C; see Fig.2 − 0.7 W
T
=25°C; note 3; see Fig.2 − 0.98 W
amb
T
=25°C; note 4; see Fig.2 − 0.66 W
amb
storage temperature −55 +150 °C
operating junction temperature −55 150 °C
Notes
1. T
is the temperature at the soldering point of the drain lead.
s
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with an R
4. Device mounted on a printed-circuit board with an R
(ambient to tie-point) of 27.5 K/W.
th a-tp
(ambient to tie-point) of 90 K/W.
th a-tp
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point; see Fig.4 100 K/W
1998 Feb 18 3
Philips Semiconductors Objective specification
P-channel enhancement mode MOS transistor
BSH299
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage VGS= 0; ID= −10 µA −50 −−V
gate-source threshold voltage VGS=VDS; ID= −1mA −0.8 −−2V
drain-source leakage current VGS= 0; VDS= −40 V −−−100 nA
= 0; VDS= −50 V −−−10 µA
V
GS
V
= 0; VDS= −50 V; Tj= 125 °C −−−60 µA
GS
gate leakage current VGS= ±20 V; VDS=0 −−±10 nA
drain-source on-state resistance VGS= −10 V; ID= −0.13 A;
−−10 Ω
see Fig.10
y
forward transfer admittance VDS= −25 V; ID= −0.13 A 50 −−mS
fs
C
iss
C
oss
C
rss
input capacitance VGS= 0; VDS= −25 V; f = 1 MHz;
output capacitance − 15 25 pF
see Fig.7
− 25 45 pF
reverse transfer capacitance − 3.5 12 pF
Switching times (see Figs 5 and 6)
t
on
turn-on switching time VGS=0to−10 V; VDD= −40 V;
− 3 − ns
ID= −0.2 A
t
off
turn-off switching time VGS= −10 to 0 V; VDD= −40 V;
− 7 − ns
ID= −0.2 A
1998 Feb 18 4
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