Philips BSH203 Datasheet

Philips Semiconductors Product specification

P-channel enhancement mode BSH203
MOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA

• Very low threshold voltage V

s

• Fast switching

• Logic level compatible I

• Subminiature surface mount
package R

g

≤ 1.1 Ω (VGS = -2.5 V)

DS(ON)

V

d

GENERAL DESCRIPTION PINNING SOT23

P-channel, enhancement mode, PIN DESCRIPTION
logic level, field-effect power
transistor. This device has low 1 gate
threshold voltage and extremely
fast switching making it ideal for 2 source
battery powered applications and
high speed digital interfacing. 3 drain

The BSH203 is supplied in the
SOT23 subminiature surface
mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

= -30 V

DS

= -0.47 A

D

≥ 0.4 V

GS(TO)

3

1

Top view

2

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

V

GS

I

D

Drain-source voltage - -30 V
Drain-gate voltage RGS = 20 kΩ - -30 V
Gate-source voltage - ± 8V
Drain current (DC) Ta = 25 ˚C - -0.47 A

Ta = 100 ˚C - -0.3 A

I

DM

P

tot

Drain current (pulse peak value) Ta = 25 ˚C - -1.9 A
Total power dissipation Ta = 25 ˚C - 0.417 W

Ta = 100 ˚C - 0.17 W

T

stg

, T

j

Storage & operating temperature - 55 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-a

Thermal resistance junction to FR4 board, minimum 300 - K/W
ambient footprint

August 1998 1 Rev 1.000

Philips Semiconductors Product specification

P-channel enhancement mode BSH203

MOS transistor

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

R

DS(ON)

g

fs

I

GSS

I

DSS

Q

g(tot)

Q

gs

Q

gd

t

d on

t

r

t

d off

t

f

C

iss

C

oss

C

rss

Drain-source breakdown VGS = 0 V; ID = -10 µA -30 - - V
voltage
Gate threshold voltage VDS = VGS; ID = -1 mA -0.4 -0.68 - V

Tj = 150˚C -0.1 - - V
Drain-source on-state VGS = -4.5 V; ID = -280 mA - 0.66 0.9 Ω
resistance VGS = -2.5 V; ID = -280 mA - 0.92 1.1 Ω

VGS = -1.8 V; ID = -140 mA - 1.1 1.2 Ω

VGS = -2.5 V; ID = -280 mA; Tj = 150˚C - 1.4 1.65 Ω
Forward transconductance VDS = -24 V; ID = -280 mA 0.3 1.0 - S
Gate source leakage current VGS = ±8 V; VDS = 0 V - ±10 ±100 nA
Zero gate voltage drain VDS = -24 V; VGS = 0 V; - -50 -100 nA
current Tj = 150˚C - -1.3 -10 µA

Total gate charge ID = -0.5 A; V

= -10 V; VGS = -4.5 V - 2.2 - nC

DD

Gate-source charge - 0.4 - nC
Gate-drain (Miller) charge - 0.25 - nC

Turn-on delay time VDD = -10 V; ID = -0.5 A; - 2 - ns
Turn-on rise time VGS = -8 V; RG = 6 Ω - 4.5 - ns
Turn-off delay time Resistive load - 45 - ns
Turn-off fall time - 20 - ns

Input capacitance VGS = 0 V; VDS = -24 V; f = 1 MHz - 110 - pF
Output capacitance - 27 - pF
Feedback capacitance - 7 - pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain Ta = 25 ˚C - - -0.47 A
current
Pulsed reverse drain current - - -1.9 A
Diode forward voltage IF = -0.38 A; VGS = 0 V - -0.87 -1.3 V

Reverse recovery time IF = -0.5 A; -dIF/dt = 100 A/µs; - 27 - ns
Reverse recovery charge VGS = 0 V; VR = -24 V - 28 - nC

August 1998 2 Rev 1.000

Philips Semiconductors Product specification

P-channel enhancement mode BSH203
MOS transistor

Normalised Power Dissipation, PD (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

Normalised Drain Current, ID (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

D 25 ˚C

= f(Ta)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ta); conditions: VGS ≤ -10 V

D 25 ˚C

Peak Pulsed Drain Current, IDM (A)

1000

D = 0.5

100

10

0.1

0.2

0.1

0.05

0.02
single pulse

1

1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Pulse width, tp (s)

P

D

tp

D = tp/T

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-a

Drain current, ID (A)

-3
Tj = 25 C

-2.5

-2

-1.5

-1

-0.5

0

Drain-Source Voltage, VDS (V)

BSH203

-4.5 V

-2.5 V

-2.2 V

-2 V

-1.8 V

-1.6 V

-1.4 V

VGS = -1.2 V

-2-1.5-1-0.50

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

Peak Pulsed Drain Current, IDM (A)

10

RDS(on) = VDS/ ID

1

0.1
d.c.

0.01

0.001

0.1 1 10 100
Drain-Source Voltage, VDS (V)

BSH203

tp = 10us

100 us
1 ms
10 ms

100 ms

Fig.3. Safe operating area. Ta = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Drain-Source On Resistance, RDS(on) (Ohms)

2.8

2.6

2.4

2.2

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

3

-1.1 V

2

1

0

-1.2 V

-1.3 V

-1.5 V

-1.4 V

Drain Current, ID (A)

-1.6 V

-1.8 V

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BSH203

Tj = 25 C

-2.5 V

VGS = -4.5V

-1.4-1.2-1-0.8-0.6-0.4-0.20

.

GS

August 1998 3 Rev 1.000