Philips BSH202 Datasheet
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA
• Low threshold voltage V
s
• Fast switching
• Logic level compatible I
• Subminiature surface mount
package R
g
≤ 0.9 Ω (VGS = -10 V)
DS(ON)
d
GENERAL DESCRIPTION PINNING SOT23
P-channel, enhancement mode, PIN DESCRIPTION
logic level, field-effect power
transistor. This device has low 1 gate
threshold voltage and extremely
fast switching making it ideal for 2 source
battery powered applications and
high speed digital interfacing. 3 drain
The BSH202 is supplied in the
SOT23 subminiature surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
= -30 V
DS
= -0.52 A
D
3
1
Top view
2
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGR
V
GS
I
D
Drain-source voltage - -30 V
Drain-gate voltage RGS = 20 kΩ - -30 V
Gate-source voltage - ± 20 V
Drain current (DC) Ta = 25 ˚C - -0.52 A
Ta = 100 ˚C - -0.33 A
I
DM
P
tot
Drain current (pulse peak value) Ta = 25 ˚C - -2.1 A
Total power dissipation Ta = 25 ˚C - 0.417 W
Ta = 100 ˚C - 0.17 W
T
stg
, T
j
Storage & operating temperature - 55 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-a
Thermal resistance junction to FR4 board, minimum 300 - K/W
ambient footprint
August 1998 1 Rev 1.000
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
g
fs
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = -10 µA -30 - - V
voltage
Gate threshold voltage VDS = VGS; ID = -1 mA -1 -1.9 - V
Tj = 150˚C -0.4 - - V
Drain-source on-state VGS = -10 V; ID = -280 mA - 0.63 0.9 Ω
resistance VGS = -4.5 V; ID = -140 mA - 0.89 1.35 Ω
VGS = -10 V; ID = -280 mA; Tj = 150˚C - 0.95 1.35 Ω
Forward transconductance VDS = -24 V; ID = -280 mA 0.2 0.7 - S
Gate source leakage current VGS = ±20 V; VDS = 0 V - ±10 ±100 nA
Zero gate voltage drain VDS = -24 V; VGS = 0 V; - -50 -100 nA
current Tj = 150˚C - -0.4 -10 µA
Total gate charge ID = -0.3 A; V
= -15 V; VGS = -10 V - 2.9 - nC
DD
Gate-source charge - 0.4 - nC
Gate-drain (Miller) charge - 0.5 - nC
Turn-on delay time VDD = -15 V; ID = -0.5 A; - 2 - ns
Turn-on rise time VGS = -10 V; RG = 6 Ω - 4.5 - ns
Turn-off delay time Resistive load - 45 - ns
Turn-off fall time - 20 - ns
Input capacitance VGS = 0 V; VDS = -24 V; f = 1 MHz - 80 - pF
Output capacitance - 27 - pF
Feedback capacitance - 9 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain Ta = 25 ˚C - - -0.56 A
current
Pulsed reverse drain current - - -2.2 A
Diode forward voltage IF = -0.5 A; VGS = 0 V - -0.87 -1.3 V
Reverse recovery time IF = -0.5 A; -dIF/dt = 100 A/µs; - 30 - ns
Reverse recovery charge VGS = 0 V; VR = -24 V - 28 - nC
August 1998 2 Rev 1.000
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
Normalised Power Dissipation, PD (%)
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature, Ta (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
Normalised Drain Current, ID (%)
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient Temperature, Ta (C)
D 25 ˚C
= f(Ta)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Ta); conditions: VGS ≤ -10 V
D 25 ˚C
Peak Pulsed Drain Current, IDM (A)
1000
D = 0.5
100
10
0.1
0.2
0.1
0.05
0.02
single pulse
1
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
P
D
tp
D = tp/T
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-a
Drain current, ID (A)
-1.4
Tj = 25 C
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-4.5 V
VGS = -10 V
Drain-Source Voltage, VDS (V)
BSH202
-3.5 V
-3.3 V
-3.1 V
-2.9 V
-2.7 V
-2.5 V
-2-1.5-1-0.50
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
Peak Pulsed Drain Current, IDM (A)
10
RDS(on) = VDS/ ID
1
0.1
d.c.
0.01
0.001
0.1 1 10 100
Drain-Source Voltage, VDS (V)
BSH202
tp = 10us
100 us
1 ms
10 ms
100 ms
Fig.3. Safe operating area. Ta = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
Drain-Source On Resistance, RDS(on) (Ohms)
3
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
-2.5 V
2
1
0
-2.9 V
-2.7 V
Drain Current, ID (A)
-3.1 V
-3.3 V
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BSH202
Tj = 25 C
-3.5 V
-4.5 V
VGS = -10 V
-1.4-1.2-1-0.8-0.6-0.4-0.20
.
GS
August 1998 3 Rev 1.000
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