Philips bsh121 DATASHEETS
1. Description
2. Features
BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 August 2000 Product specification
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH121 in SOT323.
■ TrenchMOS™ technology
■ Very fast switching
■ Low threshold voltage
■ Subminiature surface mount package.
3. Applications
■ Battery management
c
c
■ High speed switch
■ Logic level translator.
4. Pinning information
Table 1: Pinning - SOT323, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 source (s)
3 drain (d)
Top view
1. TrenchMOS is a trademark of Royal Philips Electronics.
3
12
MBC870
SOT323 N-channel MOSFET
d
g
03ab30
s
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 55 V
drain current (DC) Tsp=25°C; VGS= 4.5 V − 300 mA
total power dissipation Tsp=25°C − 0.7 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 4.5 V; ID= 500 mA 2.3 4.0 Ω
= 2.5 V; ID= 75 mA 2.4 5.0 Ω
V
GS
= 1.8 V; ID= 75 mA 3.1 8.0 Ω
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
drain-source voltage (DC) Tj=25to150°C − 55 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−55 V
gate-source voltage (DC) −±8V
drain current (DC) Tsp=25°C; VGS= 4.5 V;
− 300 mA
Figure 2 and 3
T
= 100 °C; VGS= 4.5 V; Figure 2 − 194 mA
sp
peak drain current Tsp=25°C; pulsed; tp≤ 10 µs;
− 1.2 A
Figure 3
total power dissipation Tsp=25°C; Figure 1 − 0.7 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C
source (diode forward) current (DC) Tsp=25°C − 300 mA
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs − 1.2 A
9397 750 07302
Product specification Rev. 01 — 14 August 2000 2 of 13
© Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
120
P
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
P
P
der
tot
----------------------
P
tot 25 C°()
100%×=
03aa17
Tsp (oC)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
10
Tsp=25oC
I
D
(A)
1
R
DSon=VDS/ID
120
I
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
03aa25
Tsp (oC)
VGS≥ 4.5 V
I
I
der
D
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03aa72
tp=10µs
100µs
-1
10
t
P
-2
10
t
p
-3
10
11010
p
δ
=
T
t
T
D.C.
1ms
10 ms
100 ms
VDS(V)
2
Tsp=25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07302
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 01 — 14 August 2000 3 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-sp)
R
th(j-a)
thermal resistance from junction to solder
point
thermal resistance from junction to ambient mounted on printed circuit board;
7.1 Transient thermal impedance
mounted on metal clad substrate;
Figure 4
minimum footprint
180 K/W
400 K/W
03aa70
t
p
δ =
T
t
T
tp (s)
Z
th(j-sp)
(K/W)
3
10
δ = 0.5
2
10
0.2
0.1
0.05
10
0.02
single pulse
1
-5
10
-4
10
-3
10
-2
10
P
t
p
-1
10
110
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of
pulse duration.
9397 750 07302
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 01 — 14 August 2000 4 of 13
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