Philips bsh120t DATASHEETS
M3D186
1. Description
2. Features
BSH120T
N-channel enhancement mode field-effect transistor
Rev. 01 — 06 September 2000 Product specification
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH120T in SOT54 (TO-92).
■ TrenchMOS™ technology
■ Low on-state resistance
■ Very fast switching
■ Logic level compatible.
3. Applications
■ Relay drivers
c
c
■ DC to DC converters
■ Logic level translators.
4. Pinning information
Table 1: Pinning - SOT54, simplified outline and symbol
Pin Description Simplified outline Symbol
1 source (s)
2 drain (d)
3 gate (g)
03ab40
321
SOT54 (TO-92)
1. TrenchMOS is a trademark of Royal Philips Electronics.
g
MBB076
d
s
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 30 V
drain current (DC) T
total power dissipation T
=25°C; VGS=10V − 2.2 A
amb
=25°C − 0.83 W
amb
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 2.2 A 80 100 mΩ
= 4.5 V; ID= 1 A 120 200 mΩ
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
drain-source voltage (DC) Tj=25to150°C − 30 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−30 V
gate-source voltage (DC) −±20 V
drain current (DC) T
peak drain current T
total power dissipation T
=25°C; VGS=10V;Figure 2 and 3 − 2.2 A
amb
= 100 °C; VGS=10V;Figure 2 − 1.4 A
T
amb
=25°C; pulsed; tp≤ 10 µs; Figure 3 − 9A
amb
=25°C; Figure 1 − 0.83 W
amb
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C
source (diode forward) current (DC) T
peak source (diode forward) current T
=25°C − 0.7 A
amb
=25°C; tp≤ 10 µs − 9A
amb
9397 750 07451
Product specification Rev. 01 — 06 September 2000 2 of 13
© Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
T
amb
03aa11
(oC)
120
100
P
der
(%)
80
60
40
20
0
0 25 50 75 100 125 150 175
P
P
der
tot
----------------------
P
tot 25 C°()
100%×=
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
10
R
DSon=VDS/ID
P
t
p
δ
=
T
(A)
I
D
1
-1
10
D.C.
120
I
der
100
(%)
80
60
40
20
0
0 25 50 75 100 125 150 175
03aa19
T
(oC)
amb
VGS≥ 4.5 V
I
D
der
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03ac50
tp = 100 µs
1ms
10 ms
100 ms
t
T
11010
V
(V)
DS
2
T
=25°C; IDM is single pulse.
amb
t
p
-2
10
-1
10
Fig 3. Safe operating area; drain and peak drain currents as a function of drain-source voltage.
9397 750 07451
Product specification Rev. 01 — 06 September 2000 3 of 13
© Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
thermal resistance from junction to ambient vertical in still air; lead length ≤ 4 mm; Figure 4 150 K/W
7.1 Transient thermal impedance
03ac49
t
p
δ =
T
t
p
t
T
2
(s)
t
p
T
amb
10
Z
th(j-a)
(K/W)
10
10
10
10
=25°C
3
2
δ
= 0.5
0.2
0.1
0.05
0.02
1
-1
-2
-5
10
single pulse
-4
10
-3
10
-2
10
-1
10
P
11010
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
duration.
9397 750 07451
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 01 — 06 September 2000 4 of 13
Loading...