Philips BSH114 Technical data

BSH114

BSH114

N-channel enhancement mode field effect transistor

Rev. 01 — 09 November 2000

Product specification

M3D088

1. Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™1 technology.

Product availability:

BSH114 in SOT23.

2. Features

■TrenchMOS™ technology

■Low on-state resistance

■Very fast switching

■Surface mount package.

3. Applications

■Relay driver

■DC to DC converter

■General purpose switch.

4.Pinning information

Table 1: Pinning - SOT23, simplified outline and symbol

Pin

Description

Simplified outline

Symbol

1

gate (g)

3

d

2

source (s)

3

drain (d)

1

2

g

Top view

MSB003

MBB076

s

SOT23

1.TrenchMOS is a trademark of Royal Philips Electronics.

	Philips Semiconductors				BSH114
			N-channel enhancement mode field effect transistor
5. Quick reference data
Table 2: Quick reference data
	Symbol	Parameter	Conditions	Typ	Max	Unit
	VDS	drain-source voltage (DC)	Tj = 25 to 150 °C	−	100	V
	ID	drain current (DC)	Tsp = 25 °C; VGS = 10 V	−	0.85	A
	Ptot	total power dissipation	Tsp = 25 °C	−	0.83	W
	Tj	junction temperature		−	150	°C
	RDSon	drain-source on-state resistance	VGS = 10 V; ID = 0.5 A	400	500	mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
VDS	drain-source voltage (DC)	Tj = 25 to 150 °C		−	100	V
VDGR	drain-gate voltage (DC)	Tj = 25 to 150 °C; RGS = 20 kΩ		−	100	V
VGS	gate-source voltage (DC)			−	±20	V
ID	drain current (DC)	Tsp = 25 °C; VGS = 10 V; Figure 2 and 3		−	0.85	A
		Tsp = 100 °C; VGS = 10 V; Figure 2 and 3		−	0.5	A
		Tamb = 25 °C; VGS = 10 V		−	0.5	A
		Tamb = 100 °C; VGS = 10 V		−	0.3	A
IDM	peak drain current	Tsp = 25	°C; tp ≤ 10 μs; Figure 3	−	3.4	A
Ptot	total power dissipation	Tsp = 25	°C; Figure 1	−	0.83	W
		Tamb = 25 °C		−	0.36	W
Tstg	storage temperature			−55	+150	°C
Tj	operating junction temperature			−55	+150	°C
Source-drain (reverse) diode
IS	source (diode forward) current (DC)	Tsp = 25	°C	−	0.85	A
ISM	peak (diode forward) source current	Tsp = 25	°C; tp ≤ 10 μs	−	3.4	A

9397 750 07708

© Philips Electronics N.V. 2000. All rights reserved.

Product specification

Rev. 01 — 09 November 2000

2 of 13

Philips Semiconductors	BSH114
	N-channel enhancement mode field effect transistor

									03aa17
		120
		Pder
		(%)
		100
		80
		60
		40
		20
		0
		0	25		50	75	100	125	150	175
								Tsp (oC)
P		Ptot		´ 100%
	der	= ----------------------
		P	°C )
		tot (25

Fig 1. Normalized total power dissipation as a function of solder point temperature.

						03aa25
120
Ider
(%)100
80
60
40
20
0
0	25	50	75	100	125	150	175
						Tsp (oC)
VGS ³ 10 V

I D	I D		´ 100%
	= ------------------
	I D(25	°C )

Fig 2. Normalized continuous drain current as a function of solder point temperature.

				03ac55
10
RDSon = VDS/ ID
ID
(A)
1				tp = 10 µs
				100 µs
				1 ms
10-1				10 ms
	tp	D.C.
P
	δ = T			100 ms
10-2
tp	t
T
10-3
10-1	1	10	102	VDS (V)	103

Tsp = 25 °C; IDM is single pulse

Fig 3. Safe operating area; drain and peak currents as a function of drain source voltage.

9397 750 07708

© Philips Electronics N.V. 2000. All rights reserved.

Product specification

Rev. 01 — 09 November 2000

3 of 13

	Philips Semiconductors			BSH114
			N-channel enhancement mode field effect transistor
7. Thermal characteristics
Table 4:		Thermal characteristics
	Symbol	Parameter	Conditions	Value	Unit
	Rth(j-sp)	thermal resistance from junction to solder point	mounted on a metal clad substrate; Figure 4	150	K/W
	Rth(j-amb)	thermal resistance from junction to ambient	mounted on a printed circuit board;	350	K/W
			minimum footprint

7.1 Transient thermal impedance

103							03ac54
Zth(j-sp)
(K/W)
102	δ = 0.5
	0.2						tp
	0.1					P	δ =
							T
10	0.05
	0.02					tp	t
							T
			single pulse
1
10-5		10-4	10-3	10-2	10-1	1	tp (s)	10

Tsp = 25 °C

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 07708

© Philips Electronics N.V. 2000. All rights reserved.

Product specification

Rev. 01 — 09 November 2000

4 of 13