Datasheet BSH111 Datasheet (Philips)

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M3D088

1. Description

2. Features

BSH111

N-channel enhancement mode field-effect transistor

Rev. 02 — 26 April 2002 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.

Product availability:

BSH111 in SOT23.

■ TrenchMOS™ technology

■ Very fast switching

■ Low threshold voltage

■ Subminiature surface mount package.

3. Applications

■ Battery management

■ High speed switch

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 source (s)
3 drain (d)

12

Top view

3

MSB003

SOT23

g

MBB076

d

s

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I

D

P
T
R

DS

tot
j
DSon

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 55 V
drain current (DC) Tsp=25°C; VGS= 4.5 V - 335 mA
total power dissipation Tsp=25°C - 0.83 W
junction temperature - 150 °C
drain-source on-state resistance VGS= 4.5 V; ID= 500 mA 2.3 4.0 Ω

= 2.5 V; ID= 75 mA 2.4 5.0 Ω

V

GS

= 1.8 V; ID= 75 mA 3.1 8.0 Ω

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 55 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -55V
gate-source voltage - ±10 V
drain current (DC) Tsp=25°C; VGS= 4.5 V;

- 335 mA

Figure 2 and 3

T

= 100 °C; VGS= 4.5 V; Figure 2 - 212 mA

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs;

- 1.3 A

Figure 3

total power dissipation Tsp=25°C; Figure 1 - 0.83 W
storage temperature −65 +150 °C
junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C - 335 mA
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs - 1.3 A

9397 750 09629

Product data Rev. 02 — 26 April 2002 2 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

03aa17

200

Tsp (°C)

P

P

der

(%)

der

120

80

40

0

0

P

tot

----------------------

P

tot 25 C°()

50 100 150

100%×=

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

10

150

T

03aa25

sp

200

(°C)

I

(%)

der

120

80

40

0

0

50 100

VGS≥ 4.5 V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03aa71

I
(A)

D

1

-1

10

-2

10

1

Limit R

DSon

= VDS/ I

D

tp=10µs

100µs

1ms

DC

10

10 ms

100 ms

VDS (V)

Tsp=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

10

9397 750 09629

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 02 — 26 April 2002 3 of 13

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to
solder point

thermal resistance from junction to
ambient

7.1 Transient thermal impedance

mounted on metal clad
substrate; Figure 4

minimum footprint; mounted on
printed circuit board

- - 150 K/W

- 350 - K/W

3

10

Z

th(j-sp)
(K/W)

2

δ = 0.5

10

0.2

0.1

0.05

10

0.02

single pulse

1

-5

10

-4

10

-3

10

-2

10

-1

10

P

δ =

t

p

T

1

Mounted on metal clad substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

t

p

T

t

tp (s)

03aa69

10

9397 750 09629

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 02 — 26 April 2002 4 of 13

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 44 V; VGS=0V

gate-source leakage current VGS= ±8 V; VDS= 0 V - 10 100 nA
drain-source on-state

resistance

Dynamic characteristics

g

Q
Q
Q
C
C
C
t
t

fs

g(tot)
gs

gd
iss
oss
rss

on
off

forward transconductance VDS= 10 V; ID= 200 mA;

total gate charge ID= 0.5 A; VDS=44V;
gate-source charge - 0.05 - nC
gate-drain (Miller) charge - 0.5 - nC
input capacitance VGS=0V; VDS=10V;
output capacitance - 7 30 pF
reverse transfer capacitance - 4 10 pF
turn-on time VDD= 50 V; RD= 250 Ω;
turn-off time - 11 15 ns

ID=10µA; VGS=0V

=25°C5575-V

T

j

= −55 °C50--V

T

j

Figure 9

=25°C 0.4 1.0 1.3 V

T

j

= 150 °C 0.3 - - V

T

j

= −55 °C - - 2.5 V

T

j

=25°C - 0.01 1.0 µA

T

j

= 150 °C--10µA

T

j

VGS= 2.5 V; ID=75mA;

Figure 7 and 8

=25°C - 2.4 5 Ω

T

j

= 150 °C - - 7.4 Ω

T

j

= 4.5 V; ID= 500 mA;

V

GS

Figure 7 and 8

=25°C - 2.3 4 Ω

T

j

= 1.8 V; ID=75mA;

V

GS

Figure 7 and 8

=25°C - 3.1 8 Ω

T

j

100 380 - mS

Figure 11

- 1.0 - nC

=8V;Figure 14

V

GS

-1740pF

f = 1 MHz; Figure 12

- 4 10 ns

=10V; RG=50Ω;

V

GS

=50Ω

R

GS

9397 750 09629

Product data Rev. 02 — 26 April 2002 5 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

Table 5: Characteristics

…continued

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

V

SD

source-drain (diode forward)
voltage

t

rr

Q

r

reverse recovery time IS= 300 mA;
recovered charge - 30 - nC

IS= 300 mA; VGS=0V;

Figure 13

/dt = −100 A/µs;

dI

S

=0V; VDS=25V

V

GS

- 0.95 1.5 V

-30-ns

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Product data Rev. 02 — 26 April 2002 6 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

0.8

I

D

(A)

0.6

0.4

0.2

0

0 0.4 0.8 1.2 1.6 2

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

20

DSon
(Ω)

16

1.4 V

1.6 V

R

03aa73

VGS = 4.5 V

3 V

1.8 V

1.6 V

1.4 V

VDS (V)

03aa74

2 V

0.8

I

D

(A)

0.6

0.4

0.2

0

0

1

=25°C and 150 °C; VDS> ID× R

j

Tj = 25 °C

23

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2.4

a

1.8

03aa75

150 °C

45

VGS (V)

DSon

03aa28

12

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 09629

1.8 V
2 V

8

3 V

4

0

0

0.2

0.4

VGS = 4.5 V

0.6
ID (A)

0.8

1.2

0.6

0

-60 0

a

=

----------------------------

R

R

DSon

DSon 25 C°()

60

120

180

Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 02 — 26 April 2002 7 of 13

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

2

V

GS(th)

(V)

1.6

1.2

typ

0.8

0.4

0

-60 0 60 120 180

ID= 1 mA; VDS=V

min

GS

03aa38

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

03aa76

g
(S)

0.5

fs

0.4

Tj = 25 °C

03aa89

1.6 2
V

(V)

GS

(A)

-1

10

I

D

-2

10

-3

10

10

10

10

-4

-5

-6
0

min

0.4 0.8

typ

1.2

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03aa78

C

(pF)

2

10

C

0.3
150 °C

0.2

0.1

0

0

Tj=25°C and 150 °C; VDS> ID× R

0.2

0.4

DSon

ID (A)

0.6

Fig 11. Forward transconductance as a function of

drain current; typical values.

10

1

-1

10

110

VGS= 0 V; f = 1 MHz

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

iss

C

oss

C

rss

VDS (V)

2

10

values.

9397 750 09629

Product data Rev. 02 — 26 April 2002 8 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

(A)

1

I

S

0.8

0.6

0.4

0.2

0

0 0.4

150 °C

0.8

Tj = 25 °C

1.2
VSD (V)

03aa77

1.6

8

V

GS

(V)

6

4

2

0

0 0.2 0.4 0.6 0.8 1

Tj=25°C and 150 °C; VGS=0V ID= 0.5 A; VDS=44V

Fig 13. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

values.

03ab08

QG (nC)

9397 750 09629

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 02 — 26 April 2002 9 of 13

Philips Semiconductors

BSH111

N-channel enhancement mode field-effect transistor

9. Package outline

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

1

A

max.

0.48

0.1

0.38

cD

b

p

0.15

3.0

0.09

2.8

IEC JEDEC EIAJ

E

1.4

1.9

1.2

REFERENCES

e

e

H

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

0.95

1

2.5

2.1

Fig 15. SOT23.

9397 750 09629

Product data Rev. 02 — 26 April 2002 10 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

N-channel enhancement mode field-effect transistor

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

02 20020426 - Product data (9397 750 09629)

Modifications

VGS data updated.

•

01 20000807 - Product specification; initial version.

BSH111

9397 750 09629

Product data Rev. 02 — 26 April 2002 11 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

Philips Semiconductors

11. Data sheet status

BSH111

BSH111

N-channel enhancement mode field-effect transistor

N-channel enhancement mode field-effect transistor

Data sheet status

Objective data Development This data sheetcontains datafrom the objective specification forproduct development. Philips Semiconductors

Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a

Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2]

Definition

reserves the right to change the specification in any manner without notice.

later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warrantiesthat these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

14. Trademarks

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [e-mail]. Fax: [phone]

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

9397 750 09629

9397 750 09629

Product data Rev. 02 — 26 April 2002 12 of 13

Product data Rev. 02 — 26 April 2002 12 of 13

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance. . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BSH111

N-channel enhancement mode field-effect transistor

© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 26 April 2002 Document order number: 9397 750 09629