Philips BSH105 Datasheet

Philips Semiconductors Product specification

N-channel enhancement mode BSH105
MOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA

• Very low threshold voltage VDS = 20 V

d

• Fast switching

• Logic level compatible ID = 1.05 A

• Subminiature surface mount
package R

g

s

≤ 250 mΩ (VGS = 2.5 V)

DS(ON)

V

≥ 0.4 V

GS(TO)

GENERAL DESCRIPTION PINNING SOT23

N-channel, enhancement mode, PIN DESCRIPTION
logic level, field-effect power
transistor. This device has very low 1 gate

3

threshold voltage and extremely
fast switching making it ideal for 2 source
battery powered applications and
high speed digital interfacing. 3 drain

The BSH105 is supplied in the

1

SOT23 subminiature surface
mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Top view

2

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

V

GS

I

D

Drain-source voltage - 20 V
Drain-gate voltage RGS = 20 kΩ -20V
Gate-source voltage - ± 8V
Drain current (DC) Ta = 25 ˚C - 1.05 A

Ta = 100 ˚C - 0.67 A

I

DM

P

tot

Drain current (pulse peak value) Ta = 25 ˚C - 4.2 A
Total power dissipation Ta = 25 ˚C - 0.417 W

Ta = 100 ˚C - 0.17 W

T

stg

, T

j

Storage & operating temperature - 55 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-a

Thermal resistance junction to FR4 board, minimum 300 - K/W
ambient footprint

August 1998 1 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

R

DS(ON)

g

fs

I

GSS

I

DSS

Q

g(tot)

Q

gs

Q

gd

t

d on

t

r

t

d off

t

f

C

iss

C

oss

C

rss

Drain-source breakdown VGS = 0 V; ID = 10 µA20--V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 0.4 0.57 - V

Tj = 150˚C 0.1 - - V
Drain-source on-state VGS = 4.5 V; ID = 0.6 A - 140 200 mΩ
resistance VGS = 2.5 V; ID = 0.6 A - 180 250 mΩ

VGS = 1.8 V; ID = 0.3 A - 240 300 mΩ

VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C - 270 375 mΩ
Forward transconductance VDS = 16 V; ID = 0.6 A 0.5 1.6 - S
Gate source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 16 V; VGS = 0 V; - 50 100 nA
current Tj = 150˚C - 1.3 10 µA

Total gate charge ID = 1 A; V

= 20 V; VGS = 4.5 V - 3.9 - nC

DD

Gate-source charge - 0.4 - nC
Gate-drain (Miller) charge - 1.4 - nC

Turn-on delay time VDD = 20 V; ID = 1 A; - 2 - ns
Turn-on rise time VGS = 8 V; RG = 6 Ω - 4.5 - ns
Turn-off delay time Resistive load - 45 - ns
Turn-off fall time - 20 - ns

Input capacitance VGS = 0 V; VDS = 16 V; f = 1 MHz - 152 - pF
Output capacitance - 71 - pF
Feedback capacitance - 33 - pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain Ta = 25 ˚C - - 1.05 A
current
Pulsed reverse drain current - - 4.2 A
Diode forward voltage IF = 0.5 A; VGS = 0 V - 0.74 1 V

Reverse recovery time IF = 0.5 A; -dIF/dt = 100 A/µs; - 27 - ns
Reverse recovery charge VGS = 0 V; VR = 16 V - 19 - nC

August 1998 2 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105
MOS transistor

Normalised Power Dissipation, PD (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

Normalised Drain Current, ID (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

D 25 ˚C

= f(Ta)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ta); conditions: VGS ≥ 4.5 V

D 25 ˚C

Peak Pulsed Drain Current, IDM (A)

1000

D = 0.5

100

10

0.1

0.2

0.1

0.05

0.02
single pulse

1

1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Pulse width, tp (s)

P

D

tp

T

BSH105

D = tp/T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-a

Drain Current, ID (A)

5

4.5
4

Tj = 25 C

3.5
3

2.5
2

1.5
1

0.5
0

0 0.5 1 1.5 2

4.5V

2.5V

Drain-Source Voltage, VDS (V)

BSH105

2.1 V

VGS = 1.9 V

1.7 V

1.5 V

1.3 V

1.1 V

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

Peak Pulsed Drain Current, IDM (A)

100

RDS(on) = VDS/ ID

10

1

0.1

0.01

0.1 1 10 100
Drain-Source Voltage, VDS (V)

d.c.

BSH105

tp = 100 us
1 ms
10 ms

100 ms

Fig.3. Safe operating area. Ta = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Drain-Source On Resistance, RDS(on) (Ohms)

0.5

0.45

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

Tj = 25 C

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

1.7 V

1.5 V

Drain Current, ID (A)

1.9 V

2.1 V

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BSH105

2.5 V

VGS = 4.5 V

.

GS

August 1998 3 Rev 1.000