Philips BSH102 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ndbook, halfpage

M3D088

BSH102

N-channel enhancement mode
MOS transistor

Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13b

1997 Dec 08

Philips Semiconductors Product specification

N-channel enhancement mode
MOS transistor

FEATURES

• Very low threshold

• High-speed switching

• No secondary breakdown

• Direct interface to C-MOS, TTL etc.

APPLICATIONS

• Power management

• DC to DC converters

• Battery powered applications

• ‘Glue-logic’; interface between logic blocks and/or

periphery

• General purpose switch.

DESCRIPTION

N-channel enhancement mode MOS transistor in a SOT23
SMD package.

PINNING - SOT23

PIN SYMBOL DESCRIPTION

1 g gate
2 s source
3 d drain

handbook, halfpage

Top view

3

g

21

MAM273

Fig.1 Simplified outline and symbol.

BSH102

d

s

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

SD

V

GS

V

GSth

I

D

R

DSon

P

tot

drain-source voltage (DC) − 30 V
source-drain diode forward voltage VGD= 0; IS= 0.5 A − 1V
gate-source voltage (DC) −±20 V
gate-source threshold voltage VDS=VGS; ID= 1 mA 1 − V
drain current (DC) Ts=80°C − 0.85 A
drain-source on-state resistance VGS= 10 V; ID= 0.5 A − 0.4 Ω
total power dissipation Ts=80°C − 0.5 W

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1997 Dec 08 2

Philips Semiconductors Product specification

N-channel enhancement mode

BSH102

MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Notes

1. T

s

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on printed-circuit board with an R

4. Device mounted on printed-circuit board with an R

drain-source voltage (DC) − 30 V
gate-source voltage (DC) −±20 V
drain current (DC) Ts=80°C; note 1 − 0.85 A
peak drain current note 2 − 3.4 A
total power dissipation Ts=80°C − 0.5 W

T

=25°C; note 3 − 0.75 W

amb

T

=25°C; note 4 − 0.54 W

amb

storage temperature −55 +150 °C
operating junction temperature −55 +150 °C

source current (DC) Ts=80°C − 0.5 A
peak pulsed source current note 2 − 2A

is the temperature at the soldering point of the drain lead.

(ambient to tie-point) of 27.5 K/W.

th a-tp

(ambient to tie-point) of 90 K/W.

th a-tp

0.6

handbook, halfpage

P

tot

(W)

0.4

0.2

0

0 40 80 160

120

TS (°C)

Fig.2 Power derating curve.

MGM190

10

handbook, halfpage

IDS

(A)

1

1

−

10

2

−

10

3

−

10

1

−

10

δ =0.01; Ts=80°C.
(1) R

DSon

limitation.

MGM210

(1)

t

P

t

p

T

p

=

δ

T

t

110

DC

VDS (V)

2

10

Fig.3 SOAR.

1997 Dec 08 3

Philips Semiconductors Product specification

N-channel enhancement mode

BSH102

MOS transistor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

handbook, full pagewidth

R

(K/W)

thermal resistance from junction to soldering point 140 K/W

3

10

th j-s

(1)
(2)

(3)
(4)

(5)

(6)

(7)

P

10

2

10

δ =

t

p

T

MGM201

(8)
(9)

1

−6

10

(1) δ =1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10)δ =0.

(10)

−5

10

−4

10

−3

10

t

p

T

−2

10

−1

10

t

tp (s)

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

1

1997 Dec 08 4