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DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
M3D088
BSH102
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13b
1997 Dec 08
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Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor
FEATURES
• Very low threshold
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL etc.
APPLICATIONS
• Power management
• DC to DC converters
• Battery powered applications
• ‘Glue-logic’; interface between logic blocks and/or
periphery
• General purpose switch.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
handbook, halfpage
Top view
3
g
21
MAM273
Fig.1 Simplified outline and symbol.
BSH102
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC) − 30 V
source-drain diode forward voltage VGD= 0; IS= 0.5 A − 1V
gate-source voltage (DC) −±20 V
gate-source threshold voltage VDS=VGS; ID= 1 mA 1 − V
drain current (DC) Ts=80°C − 0.85 A
drain-source on-state resistance VGS= 10 V; ID= 0.5 A − 0.4 Ω
total power dissipation Ts=80°C − 0.5 W
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1997 Dec 08 2
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Philips Semiconductors Product specification
N-channel enhancement mode
BSH102
MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Notes
1. T
s
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an R
4. Device mounted on printed-circuit board with an R
drain-source voltage (DC) − 30 V
gate-source voltage (DC) −±20 V
drain current (DC) Ts=80°C; note 1 − 0.85 A
peak drain current note 2 − 3.4 A
total power dissipation Ts=80°C − 0.5 W
T
=25°C; note 3 − 0.75 W
amb
T
=25°C; note 4 − 0.54 W
amb
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C
source current (DC) Ts=80°C − 0.5 A
peak pulsed source current note 2 − 2A
is the temperature at the soldering point of the drain lead.
(ambient to tie-point) of 27.5 K/W.
th a-tp
(ambient to tie-point) of 90 K/W.
th a-tp
0.6
handbook, halfpage
P
tot
(W)
0.4
0.2
0
0 40 80 160
120
TS (°C)
Fig.2 Power derating curve.
MGM190
10
handbook, halfpage
IDS
(A)
1
1
−
10
2
−
10
3
−
10
1
−
10
δ =0.01; Ts=80°C.
(1) R
DSon
limitation.
MGM210
(1)
t
P
t
p
T
p
=
δ
T
t
110
DC
VDS (V)
2
10
Fig.3 SOAR.
1997 Dec 08 3
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Philips Semiconductors Product specification
N-channel enhancement mode
BSH102
MOS transistor
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
handbook, full pagewidth
R
(K/W)
thermal resistance from junction to soldering point 140 K/W
3
10
th j-s
(1)
(2)
(3)
(4)
(5)
(6)
(7)
P
10
2
10
δ =
t
p
T
MGM201
(8)
(9)
1
−6
10
(1) δ =1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10)δ =0.
(10)
−5
10
−4
10
−3
10
t
p
T
−2
10
−1
10
t
tp (s)
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1
1997 Dec 08 4