Philips BSD22 Datasheet

DATA SH EET

Product specification
File under Discrete Semiconductors, SC07

December 1997

DISCRETE SEMICONDUCTORS

BSD22

MOSFET N-channel depletion
switching transistor

December 1997 2

Philips Semiconductors Product specification

MOSFET N-channel depletion switching transistor BSD22

DESCRIPTION

Symmetrical insulated-gate silicon
MOS field-effect transistor of the
n-channel depletion mode type.The
transistor is sealed in a SOT143
envelope and features a low
ON-resistance and low
capacitances.The transistor is
protected against excessive input
voltages by integrated back-to-back
diodes between gate and substrate.

Applications:

• analog and/or digital switch

• switch driver

• convertor

• chopper

PINNING

Note

1. Drain and source are
interchangeable

1 = substrate (b)
2 = source
3 = drain
4 = gate

Marking code: M32

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM389

Top view

g

d
b
s

21

34

QUICK REFERENCE DATA

Drain-source voltage V

DS

max. 20 V

Gate-source voltage V

GS

max.

+ 15 V

− 40 V

Drain current (DC) I

D

max. 50 mA

Total power dissipation up to T

amb

=25°CP

tot

max. 230 mW

Junction temperature T

j

max. 125 °C

Drain-source ON-resistance

V

GS

= 10 V; VSB= 0; ID= 1 mA R

DSon

max. 30 Ω

Feed-back capacitance

V

GS=VBS

= −5 V; VDS= 10 V; f = 1 MHz C

rss

typ. 0.6 pF