Philips BS250 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BS250
P-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors Product specification
P-channel enhancement mode vertical
D-MOS transistor
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
FEATURES
• Low R
DS(on)
• Direct interface to C-MOS
• High-speed switching
• No second breakdown
PINNING - TO-92 VARIANT
1 = source
2 = gate
3 = drain
QUICK REFERENCE DATA
Drain-source voltage −V
Gate-source voltage (open drain) ±V
Drain current (DC) −I
Total power dissipation
up to T
=25°CP
amb
Drain-source ON-resistance
= 200 mA; −VGS= 10 V R
−I
D
Transfer admittance
−I
= 200 mA; −VDS= 15 V Yfs typ. 125 mS
D
DS
GSO
D
tot
DS(on)
BS250
max. 45 V
max. 20 V
max. 0.25 A
max. 0.83 W
typ.
max.
914Ω
Ω
PIN CONFIGURATION
Note: Various pinout configurations available.
handbook, halfpage
1
Fig.1 Simplified outline and symbol.
d
2
3
g
MAM147
s
April 1995 2
Philips Semiconductors Product specification
P-channel enhancement mode vertical
D-MOS transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage −V
Gate-source voltage (open drain) ± V
Drain current (DC) −I
Drain current (peak value) −I
Total power dissipation up to T
Storage temperature range T
Junction temperature T
THERMAL RESISTANCE
From junction to ambient (note 1) R
Note
1. Transistor mounted on printed-circuit board, max. lead length 4 mm.
CHARACTERISTICS
=25°C unless otherwise specified
T
j
Drain-source breakdown voltage
− I
= 100 µA; VGS=0 −V
D
Drain-source leakage current
−V
= 25 V; VGS=0 −I
DS
Gate-source leakage current
−V
= 15 V; VDS=0 −I
GS
Gate threshold voltage
−ID= 1 mA; VDS=V
GS
= 25 °C (note 1) P
amb
DSS
GSS
−V
(BR)DSS
GS(th)
DS
D
DM
tot
stg
j
th j-a
GSO
BS250
max. 45 V
max. 20 V
max. 0.25 A
max. 0.5 A
max. 0.83 W
−65 to + 150 °C
max. 150 °C
= 150 K/W
min. 45 V
max. 0.5 µA
max. 20 nA
min.
max.
1.0
3.5VV
Drain-source ON-resistance
−I
= 200 mA; −VGS= 10 V R
D
DS(on)
typ.
max.
Transfer admittance
= 200 mA; −VDS= 15 V Yfs typ. 125 mS
−I
D
Input capacitance at f = 1 MHz
−VDS= 10 V; VGS=0 C
iss
typ.
max.
Output capacitance at f = 1 MHz
= 10 V; VGS=0 C
−V
DS
oss
typ.
max.
Feedback capacitance at f = 1 MHz
= 10 V; VGS= 0 C
−V
DS
rss
typ.
max.
April 1995 3
914Ω
Ω
3045pF
pF
2030pF
pF
510pF
pF
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