Philips BS170 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BS170

N-channel vertical D-MOS transistor

Product speciﬁcation File under Discrete Semiconductors, SC13b

April 1995

Philips Semiconductors Product speciﬁcation

N-channel vertical D-MOS transistor BS170

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

FEATURES

• Very low R

DS(on)

.

• Direct interface to C-MOS, TTL, etc.

• High-speed switching.

• No secondary breakdown.

PINNING - TO-92 VARIANT

1 = source 2 = gate 3 = drain

PIN CONFIGURATION

QUICK REFERENCE DATA

Drain-source voltage V Gate-source voltage V Drain current (DC) I Total power dissipation up to T

=25°CP

amb

Junction temperature T Drain-source ON-resistance

VGS= 10 V; ID= 200 mA R

DS GS

D

tot j

DS(on)

max. 60 V max. 15 V max. 500 mA max. 830 mW max. 150 °C

max. 5 Ω

handbook, halfpage

1

2

3

Note: Various pin configurations available.

Fig.1 Simplified outline and symbol.

April 1995 2

MAM146

d

g

s

Philips Semiconductors Product speciﬁcation

N-channel vertical D-MOS transistor BS170

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage V Drain-gate voltage V Gate-source voltage V Drain current (DC) at T Total power dissipation up to T

= 25 °CI

c

= 25 °CP

amb

Storage temperature range T Junction temperature T

THERMAL RESISTANCE

DS DG GS

D

tot stg j

max. 60 V max. 60 V max. 15 V max. 500 mA max. 830 mW

−55 to +150 °C

max. 150 °C

From junction to ambient R

CHARACTERISTICS

=25°C unless otherwise speciﬁed

T

j

Drain-source breakdown voltage

= 0; ID= 100 µAV

V

GS

Gate threshold voltage

= VDS;ID= 1 mA V

V

GS

Gate-source leakage current

V

= 15 V; VDS=0 I

GS

Drain cut-off current

V

= 25 V; VGS=0 I

DS

Drain-source ON-resistance (note 1)

= 10 V; ID= 200 mA R

V

GS

Forward transconductance (note 1)

V

= 10 V; ID= 200 mA; f = 1 kHz g

DS

Capacitances at f = 1 MHz

= 10 V; VGS=0 C

V

DS

th j-a

(BR)DS

GS(th)

GSoff

DSS

DS(on)

fs

iss

= 150 K/W

min. typ.

min. max.

6090V

V

0.8

3.0VV

max. 10 nA

max. 0.5 µA

typ. max.

2.5

5.0ΩΩ

typ. 200 mS

typ. max.

2540pF

pF

Switching times at I

I

= 200 mA; VDS= 50 V; t

D

= 200 mA

D

VGS= 0 to 10 V t

April 1995 3

C

os

C

rs

on

off

typ. max.

2230pF

pF

610pF

pF

410ns

ns

410ns

ns