Philips BS107 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BS107
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors Product specification
N-channel enhancement mode vertical
D-MOS transistor
FEATURES
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
variant envelope. Intended for use as
a line current interruptor in telephone
sets and for applications in relay,
high-speed and line transformer
drivers.
PINNING - TO-92 variant
PIN DESCRIPTION
1 source
2 gate
3 drain
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
V
I
D
R
DS
GSth
DSon
drain-source voltage (DC) 200 V
gate-source threshold voltage 2.4 V
drain current (DC) 150 mA
drain-source on-state resistance 28 Ω
handbook, halfpage
1
2
3
g
MAM146
Fig.1 Simplified outline and symbol.
BS107
d
s
April 1995 2
Philips Semiconductors Product specification
N-channel enhancement mode vertical
BS107
D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GSO
I
D
I
DM
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER MAX. UNIT
R
th j-a
drain-source voltage − 200 V
gate-source voltage open drain − 20 V
drain current DC − 150 mA
drain current peak − 300 mA
total power dissipation up to T
=25°C − 830 mW
amb
storage temperature range −65 150 °C
operating junction temperature − 150 °C
from junction to ambient 150 K/W
April 1995 3
Philips Semiconductors Product specification
N-channel enhancement mode vertical
BS107
D-MOS transistor
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown
voltage
I
DSS
I
DSX
±I
GSS
V
GS(th)
R
DS(on)
R
DS(on)
Y
transfer admittance ID= 250 mA
fs
C
iss
C
oss
C
rss
drain-source leakage current VDS= 130 V
drain-source leakage current VDS=70V
gate-source leakage current ±VGS=15V
gate threshold voltage ID=1mA
drain-source on-resistance ID=20mA
drain-source on-resistance ID= 150 mA
input capacitance VDS=10V
output capacitance VDS=10V
feedback capacitance VDS=10V
Switching times (see Figs 2 and 3)
t
on
t
off
switching-on time ID= 250 mA
switching-off time ID= 250 mA
VGS=0
ID=10µA
VGS=0
VGS= 0.2 V
VDS=0
VDS=V
GS
VGS= 2.6 V
VGS=10V
VDS=15V
VGS=0
f=1MHz
VGS=0
f=1MHz
VGS=0
f=1MHz
VDD=50V
VGS= 0 to 10 V
VDD=50V
VGS= 0 to 10 V
200 −−V
−− 30 nA
−− 1µA
−− 10 nA
0.8 − 2.4 V
− 20 28 Ω
− 14 −Ω
90 180 − mS
− 50 65 pF
− 16 25 pF
− 410pF
− 210ns
− 420ns
April 1995 4
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