Philips BRY61 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BRY61
Programmable unijunction
transistor
Product specification
Supersedes data of 1997 Jul 21
1999 Apr 27
Philips Semiconductors Product specification
Programmable unijunction transistor BRY61
DESCRIPTION
Planar PNPN trigger device in a
SOT23 plastic package.
APPLICATIONS
• Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
BRY61 A5∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 anode
2 cathode
3 gate
handbook, 2 columns
Top view
handbook, halfpage
3
MGC421
21
Fig.1 Simplified outline SOT23 and symbol.
anode
a
k
cathode
g
gate
MGL167
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
GA
I
A(AV)
I
ARM
I
ASM
dl
/dt rate of rise of anode current 1A≤ 2.5 A − 20 A/µs
A
P
tot
T
stg
T
j
T
amb
gate-anode voltage − 70 V
average anode current − 175 mA
repetitive peak anode current tp=10µs; δ = 0.01 − 2.5 A
non-repetitive peak anode current tp=10µs − 3A
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 27 2
Philips Semiconductors Product specification
Programmable unijunction transistor BRY61
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
P
I
V
V
offset
I
GAO
I
GKS
V
AK
V
OM
t
r
thermal resistance from junction to ambient in free air 500 K/W
peak point current VS= 10 V; RG=10kΩ; (see Fig.7) −− 0.2 µA
V
= 10 V; RG= 100 kΩ; (see Fig.7) −− 0.06 µA
S
valley point current VS= 10 V; RG=10kΩ; (see Fig.7) 2 −−µA
V
= 10 V; RG= 100 kΩ; (see Fig.7) 1 −−µA
S
offset voltage typical curve; IA= 0; (see Fig.7) − VP− VS− V
gate-anode leakage current IK= 0; VGA= 70 V; (see Fig.5) −− 10 nA
gate-cathode leakage current VAK= 0; VKG= 70 V; (see Fig.6) −− 100 nA
anode-cathode voltage IA= 100 mA −− 1.4 V
peak output voltage VAA= 20 V; C = 10 nF;
6 −−V
(see Figs 8 and 9)
rise time VAA= 20 V; C = 10 nF; (see Fig.9) −− 80 ns
handbook, full pagewidth
IP and IV determined by value of R1.
1
; i.e. maximum voltage drop over R1 =1 V.
R1
=
---I
A
Internal resistance of oscilloscope = 10 MΩ.
+40 V
Fig.2 Measuring circuit for peak and valley point currents.
100 µF
BZY88-
C8V2
BY206
(2x)
5 kΩ
750
Ω
1 nF
20 Ω10 kΩ
R1
D.U.T
osc.
40 K
R
G
MBK189
A
V
S
1999 Apr 27 3
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