Philips BRY56A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D186
BRY56A
Programmable unijunction
transistor
Product specification 1999 May 31
Philips Semiconductors Product specification
Programmable unijunction transistor BRY56A
DESCRIPTION
Planar PNPN trigger device in a
TO-92; SOT54 plastic package.
PINNING
PIN DESCRIPTION
1 gate
2 anode
APPLICATIONS
3 cathode
• Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
ok, halfpage
handbook, halfpage
1
2
3
anode
a
g
gate
– Pulse shapers, etc.
MSB033
k
cathode
MGL167
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
GA
I
A(AV)
I
ARM
I
ASM
dl
/dt rate of rise of anode current IA≤ 2.5 A − 20 A/µs
A
P
tot
T
stg
T
j
T
amb
gate-anode voltage − 70 V
average anode current − 175 mA
repetitive peak anode current tp=10µs; δ = 0.01 − 2.5 A
non-repetitive peak anode current tp=10µs − 3A
total power dissipation T
≤ 75 °C − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 May 31 2
Philips Semiconductors Product specification
Programmable unijunction transistor BRY56A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
P
I
V
V
offset
I
GAO
I
GKS
V
AK
V
OM
t
r
thermal resistance from junction to ambient in free air 250 K/W
peak point current VS= 10 V; RG=10kΩ; see Fig.7 −−200 nA
V
= 10 V; RG= 100 kΩ; see Fig.7 −−60 nA
S
valley point current VS= 10 V; RG=10kΩ; see Fig.7 2 −−µA
V
= 10 V; RG= 100 kΩ; see Fig.7 1 −−µA
S
offset voltage typical curve; IA= 0; see Fig.7 − VP− VS− V
gate-anode leakage current IK= 0; VGA= 70 V; see Fig.5 −−10 nA
gate-cathode leakage current VAK= 0; VKG= 70 V; see Fig.6 −−100 nA
anode-cathode voltage IA= 100 mA −−1.4 V
peak output voltage VAA= 20 V; C = 10 nF;
6 −−V
see Figs 8 and 9
rise time VAA= 20 V; C = 10 nF; see Fig.9 −−80 ns
handbook, full pagewidth
IP and IV determined by value of R1.
1
; i.e. maximum voltage drop over R1 =1 V.
R1
=
---I
A
Internal resistance of oscilloscope = 10 MΩ.
+40 V
100 µF
Fig.2 Measuring circuit for peak and valley point currents.
BZY88-
C8V2
BY206
(2x)
5 kΩ
750
Ω
1 nF
20 Ω10 kΩ
R1
D.U.T
osc.
40 K
R
G
MBK189
A
V
S
1999 May 31 3
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