Philips BRY39 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D082
BRY39
Programmable unijunction
transistor/
Silicon controlled switch
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 24
Philips Semiconductors Product specification
Programmable unijunction transistor/
Silicon controlled switch
FEATURES
• Silicon controlled switch
• Programmable unijunction
transistor.
APPLICATIONS
• Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
DESCRIPTION
Silicon planar PNPN switch or trigger
device in a TO-72 metal package.
It is an integrated PNP/NPN transistor
pair with all electrodes accessible.
PINNING
PIN DESCRIPTION
ok, halfpage
1 cathode
2 cathode gate
3 anode gate (connected to case)
4 anode
4
3
handbook, halfpage
1
2
MSB028
kg
Fig.1 Simplified outline (TO-72) and symbol.
a
k
MGL168
BRY39
ag
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Silicon controlled switch
PNP TRANSISTOR
V
EBO
NPN TRANSISTOR
V
CBO
I
ERM
P
tot
T
j
V
AK
I
H
t
on
t
off
emitter-base voltage open collector −70 V
collector-base voltage open emitter 70 V
repetitive peak emitter current −2.5 A
total power dissipation T
≤ 25 °C 275 mW
amb
junction temperature 150 °C
forward on-state voltage IA= 50 mA; IAG= 0; R
holding current IAG= 10 mA; VBB= −2 V; R
=10kΩ 1.4 V
KG-K
=10kΩ 1mA
KG-K
turn-on time 0.25 µs
turn-off time 15 µs
Programmable unijunction transistor
V
GA
I
A
T
j
I
p
gate-anode voltage 70 V
anode current (DC) T
≤ 25 °C 175 mA
amb
junction temperature 150 °C
peak point current VS=10V; RG=10kΩ 0.2 µA
1997 Jul 24 2
Philips Semiconductors Product specification
Programmable unijunction transistor/
BRY39
Silicon controlled switch
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
tot
T
stg
T
j
T
amb
Silicon controlled switch
V
CBO
V
CER
V
CEO
V
EBO
I
C
I
CM
I
E
I
ERM
total power dissipation T
≤ 25 °C − 275 mW
amb
storage temperature −65 +200 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
collector-base voltage open emitter
PNP −−70 V
NPN − 70 V
collector-emitter voltage RBE=10kΩ
PNP −−V
NPN − 70 V
collector-emitter voltage open base
PNP −−70 V
NPN −−V
emitter-base voltage open collector
PNP −−70 V
NPN − 5V
collector current (DC) note 1
PNP −−
NPN − 175 mA
peak collector current note 2
PNP −−
NPN − 175 mA
emitter current (DC)
PNP − 175 mA
NPN −−175 mA
repetitive peak emitter current tp=10µs; δ = 0.01
PNP − 2.5 A
NPN −−2.5 A
Programmable unijunction transistor
V
GA
I
A
gate-anode voltage − 70 V
anode current (AV) T
≤ 25 °C − 175 mA
amb
1997 Jul 24 3
Philips Semiconductors Product specification
Programmable unijunction transistor/
BRY39
Silicon controlled switch
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
ARM
I
ASM
dI
/dt rate of rise of anode current IA≤ 2.5 A − 20 A/µs
A
Notes
1. Provided the IE rating is not exceeded.
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 kΩ.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
repetitive peak anode current tp=10µs; δ = 0.01 − 2.5 A
non-repetitive peak anode current tp=10µs; Tj= 150 °C − 3A
thermal resistance from junction to ambient in free air 450 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Silicon controlled switch
INDIVIDUAL PNP TRANSISTOR
I
CEO
I
EBO
h
FE
INDIVIDUAL NPN TRANSISTOR
I
CER
I
EBO
V
CEsat
V
BEsat
h
FE
C
c
C
e
f
T
COMBINED DEVICE
V
AK
I
H
collector cut-off current IB= 0; VCE= −70 V; Tj= 150 °C −−10 µA
emitter cut-off current IC= 0; VEB= −70 V; Tj= 150 °C −−10 µA
DC current gain IE= 1 mA; VCE= −5V 3 15
collector cut-off current VCE=70V; RBE=10kΩ−100 nA
V
=70V; RBE=10kΩ; Tj= 150 °C − 10 µA
CE
emitter cut-off current IC= 0; VEB=5V; Tj= 150 °C − 10 µA
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 0.5 V
base-emitter saturation voltage IC= 10 mA; IB=1mA − 0.9 V
DC current gain IC= 10 mA; VCE=2V 50 −
collector capacitance IE=ie= 0; VCB=20V − 5pF
emitter capacitance IC=ic= 0; VEB= 1 V; f = 1 MHz − 25 pF
transition frequency IC= 10 mA; VCE= 2 V; f = 100 MHz 100 − MHz
forward on-state voltage R
holding current VBB= −2 V; IAG= 10 mA;
=10kΩ
KG-K
I
= 50 mA; IAG=0 − 1.4 V
A
= 50 mA; IAG= 0; Tj= −55 °C − 1.9 V
I
A
= 1 mA; IAG=10mA − 1.2 V
I
A
− 1mA
R
=10kΩ; see Fig.14
KG-K
1997 Jul 24 4
Philips Semiconductors Product specification
Programmable unijunction transistor/
BRY39
Silicon controlled switch
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
SWITCHING TIMES
t
on
t
off
Programmable unijunction transistor
I
p
I
v
V
offset
I
GAO
I
GKS
V
AK
V
OM
t
r
turn-on time V
= −0.5 to 4.5 V; R
KG-K
KG-K
=1kΩ;
− 0.25 µs
see Figs 15 and 16
V
= −0.5 to 0.5 V; R
KG-K
turn-off time R
=10kΩ; see Figs 17 and 18 − 15 µs
KG-K
peak point current VS= 10 V; RG=10kΩ;
=10kΩ− 1.5 µs
KG-K
− 0.2 µA
see Figs 3 and 8
V
= 10 V; RG= 100 kΩ;
S
− 0.06 µA
see Figs 3 and 8
valley point current VS= 10 V; RG=10kΩ;
− 2 µA
see Figs 3 and 8
V
= 10 V; RG= 100 kΩ;
S
− 1 µA
see Figs 3 and 8
offset voltage typical curve; IA= 0; for VP and V
−−V
S
see Fig.8
gate-anode leakage current IK= 0; VGA=70V − 10 nA
gate-cathode leakage current VAK= 0; VKG=70V − 100 nA
anode-cathode voltage IA= 100 mA − 1.4 V
peak output voltage VAA= 20 V; C = 10 nF;
6 − V
see Figs 9 and 11
rise time VAA= 20 V; C = 10 nF; see Fig.11 − 80 ns
Explanation of symbols
For application of the BRY39 as a programmable
unijunction transistor, only the anode gate is used. To
simplify the symbols, the term gate instead of anode gate
will be used (see Fig.2).
handbook, halfpage
anode
a
k
cathode
g
gate
MBB700
Fig.2 Programmable unijunction transistor
explanation of symbols.
1997 Jul 24 5
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